Thermal rectification in nozzle-like graphene/boron nitride nanoribbons: A molecular dynamics simulation

Innovations in manufacture of graphene-based nano-devices are principally the outcome of engineering of the nanostructure, while advanced nano-transistors, thermal logic nano-circuits, and thermal nano-diodes are multi-component tailor-made nanomaterials with precise molecular layout. To achieve such delicate graphene-based nanostructures, it is essential to optimize both materials and geometrical parameters. Herein we introduce nozzle-like graphene (G)/boron nitride (BN) nanostructures with very high unidirectional thermal rectification efficiency applying classical molecular dynamics (MD) simulations using Tersoff potential. A series of nozzle-like G/BN and BN/G nanoribbons with variable throat width, L (5-50 angstrom) and convergence angle, theta (20-90 degrees) under average T = 300 K and Delta T = 40 K (temperature differences between the thermal baths) situation were simulated to provide a complete image of thermal rectification for such nozzle-like nanostructures to be intended as thermal nano-diodes. Thermal conductivity and rectification analyses unveiled nozzle-like G/BN devices with a comparatively excellent unidirectional thermal rectification of similar to 25%, at L = 40 angstrom and theta = 60 degrees, which was conceptualized in view of phonon scattering perspective. We believe that the outcome of this survey would open new avenues in manufacturing tailor-made graphene-based nano-diodes.

Automated summary

This study presents nozzle-like G/BN nanostructures with high unidirectional thermal rectification efficiency using MD simulations and Tersoff potential.