Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition

Homoepitaxial single-crystal beta gallium oxide (beta-Ga2O3) films were fabricated by the mist chemical vapor deposition method. The crystallinity of the films grown markedly depended on growth temperature, and the optimum growth temperatures were found to be 700-800 degrees C. Using unintentionally doped beta-Ga2O3 films grown on Sn-doped beta-Ga2O3(010) substrates, the fabrication of Schottky barrier diodes was demonstrated. Furthermore, we fabricated electrically conductive Sn-doped beta-Ga2O3 films on semi-insulating Fe-doped beta-Ga2O3(010) substrates. The carrier concentrations were between 1 x 10(18) and 5 x 10(20)cm(-3). The Hall mobility was 45cm(2)V(-1) s(-1) at the carrier concentration of 1 x 10(18)cm(-3). (C) 2016 The Japan Society of Applied Physics