Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates

We achieved the successful fabrication of Sn-doped alpha-Ga2O3 thin films with higher electron mobility and wider conductivity controls by improving the crystal quality. alpha-Ga2O3 films showed n-type conductivity with a maximum electron mobility of 24cm(2)V(-1) s(-1). The carrier concentration was successfully controlled in the range of 10(17)-10(19)cm(-3). Crystal defects such as dislocations severely compensate the free carriers in a-Ga2O3 films and restrict the mobility at low carrier concentrations. Therefore, to achieve further conductivity control and higher mobility, improving the crystallinity of alpha-Ga2O3 films is necessary. (C) 2016 The Japan Society of Applied Physics