Diffusion length measurements in GaN

The results of diffusion length measurements by fitting the collected current dependence on electron beam energy are discussed. It is shown that in GaN structures, this method also allows measuring the local dopant concentration. A possibility of diffusion length mapping by this method is demonstrated. It is shown that the dislocation density is too low to explain the small diffusion lengths measured in n-GaN. (C) 2016 The Japan Society of Applied Physics