Current status of Ga2O3 power devices

Gallium oxide (Ga2O3) is an emerging wide-bandgap semiconductor for high-power, low-loss transistors and diodes by virtue of its excellent material properties and suitability for mass production. In this paper, we begin by discussing the material properties of Ga2O3 that make it an attractive alternative to not only Si but also other wide-bandgap materials such as SiC and GaN. State-of-the-art Ga2O3-based devices that have been fabricated to date demonstrate the performance potential for power electronics applications. (C) 2016 The Japan Society of Applied Physics