Conduction mechanism in highly doped β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes

Edge-defined fed-grown ((2) over bar 01) beta-Ga2O3 single crystals with high electron concentration of 3.9 x 10(18) cm(-3) at 300 K were characterized by Hall effect measurement, and Schottky barrier diodes have been demonstrated. Electron mobility was as high as 74cm(2)/(V.s) at 300K regardless of the high doping concentration. The electron concentration did not change substantially in the low temperature below 160 K. This properties can be explained by the two-band model due to the inter-band conduction. On the Schottky barrier diodes, the rectification characteristics were clearly observed, and the current density of 96.8 A/cm(2) at the forward voltage of 1.6V was obtained. (C) 2016 The Japan Society of Applied Physics