Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction

A flower-like SnO2-SnO/porous GaN (FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN, and SnO2-SnO composites with p-n junctions were loaded onto PGaN surface directly applied to H2S sensor. Meanwhile, the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150 degrees C under 50 ppm H2S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas sensor. The lowering working temperature and high sensitivity (23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO2-SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test stability. The simple design strategy of FSS/PGaN-based H2S sensor highlights its potential in various applications.

Automated summary

A flower-like SnO2-SnO/porous GaN (FSS/PGaN) heterojunction was fabricated for the first time, involving a spraying process, hydrothermal preparation of FSS, and electrochemical wet etching of GaN. The loaded SnO2-SnO composites with p-n junctions on the PGaN surface exhibited excellent transport capability, achieving a short response time and release time for H2S sensing. The obtained sensor showed high stability and potential for various applications.