The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/semiconducting poly(3-hexyl thiophene) (P3HT) blend systems have drawn great attention with their potential use for electronic applications, particularly non-volatile memory devices. It is essential to grasp a full understanding of the crystallization habits of the two polymers on different substrates for purposeful control of the structures of the blend and therefore the properties of the devices. Here, the effects of structure and morphology of the blend films generated at different substrate surfaces on the ferroelectric and switching properties of related devices are reported. It is identified that P(VDF-TrFE)/P3HT blend films prepared on graphene substrate show not only an obvious optimization in the ferroelectric behavior of P(VDF-TrFE), but also an enhancement of the charge transport within P3HT domains. By employing sandwich structure constructed by silver electrode and P3HT/P(VDF-TrFE) blend film on graphene substrate, high-performance ferroelectric memory devices have been obtained, which exhibit a great electrical switching behavior with high ON/OFF ratio of about 1000 and low coercive voltage of approximately 5 V. These findings provide useful guidance for fabricating high-performance ferroelectric memory devices.

Automated summary

This study investigates the effects of the structure and morphology of P(VDF-TrFE)/P3HT blend films on different substrates on the ferroelectric and switching properties of related devices. It is found that the blend films prepared on graphene substrate optimize the ferroelectric behavior of P(VDF-TrFE) and enhance charge transport within P3HT domains. High-performance ferroelectric memory devices are obtained with a sandwich structure composed of silver electrode and P3HT/P(VDF-TrFE) blend film on graphene substrate, exhibiting excellent electrical switching behavior.