Cover Feature: A Self-Formed Stable PbI2/NiOx Interface with Increased Ni3+Centers for Perovskite Photovoltaics (Chem. Eur. J. 24/2022)

Ultraviolet ozone flushing (UVO) has been used to oxidize the NiOx hole-transport layer (yellow). The lattice bottom left shows the activation of Ni3+ (red balls) at the top of the NiOx film, which can enhance the electrical properties and hole extraction ability of NiOx. Then, by adopting sequential deposition of perovskites, residual PbI2 is automatically formed at the bottom interface (brown layer); this prevents the NiOx film from coming into direct contact with the perovskite layer, thus avoiding NiOx-related chemical reactions. More information can be found in the Research Article by S. Yang, Y. Hou, et al. (DOI: ).

Automated summary

Ultraviolet ozone flushing (UVO) is used to oxidize the NiOx hole-transport layer, activating the Ni3+ at the top of the NiOx film and enhancing its electrical properties and hole extraction ability. Sequential deposition of perovskites leads to the formation of residual PbI2 at the bottom interface, preventing direct contact between the NiOx film and the perovskite layer and avoiding NiOx-related chemical reactions.