4.8 Article

Fluoride Doping in Crystalline and Amorphous Indium Oxide Semiconductors

期刊

CHEMISTRY OF MATERIALS
卷 34, 期 7, 页码 3253-3266

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.2c00053

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资金

  1. Northwestern U. MRSEC grant [NSF-DMR 1720139]
  2. NSF-DMREF [DMR-1729779, DMR-1842467]
  3. NSF-MRI grant [OAC-1919789]
  4. NSF [DMR-1847038, NSF/DMR-1644779]
  5. State of Florida
  6. Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource [NSF ECCS-2025633]
  7. MRSEC program at the Materials Research Center [NSF DMR-1720139]
  8. International Institute for Nanotechnology (IIN)
  9. Keck Foundation
  10. State of Illinois
  11. MRSEC [NSF-DMR 1720139]
  12. SHyNE NSF [ECCS-2025633]
  13. Northwestern University (NU)
  14. E.I. DuPont de Nemours Co.
  15. Dow Chemical Company
  16. DOE Office of Science [DE-AC02-06CH11357]

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This study investigates the effect of fluoride doping on the structure and electronic properties of both crystalline and amorphous indium oxides using experimental and theoretical techniques. The results show that fluoride doping increases the band gap in the crystalline phase but decreases it in the amorphous phase. The solid-state microstructure is also affected by the doping, with the inhibition of crystallization observed in both phases.
In this contribution, the structural and electronic effects of fluoride doping in both crystalline and amorphous indium oxides are investigated by both experimental and theoretical techniques. Pristine crystalline and amorphous fluoride-doped indium oxide (F:In-O) phases were prepared by solution-based combustion synthesis and sol-gel techniques, respectively. The chemical composition, environment, and solid-state microstructure of these materials were extensively studied with a wide array of state-of-the-art techniques such as UV-vis, X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, F-19 and In-115 solid-state NMR, high-resolution transmission electron microscopy (HR-TEM), and extended X-ray absorption fine structure (EXAFS)as well as by density functional theory (DFT) computation combined with MD simulations. Interestingly, the UV-vis data reveal that while the band gap increases upon F--doping in the crystalline phase, it decreases in the amorphous phase. The F-19 solid-state NMR data indicate that upon fluorination, the InO3F3 environment predominates in the crystalline oxide phase, whereas the InO4F2 environment is predominant in the amorphous oxide phase. The HR-TEM data indicate that fluoride doping inhibits crystallization in both crystalline and amorphous In-O phases, a result supported by the In-115 solid-state NMR, EXAFS, and DFT-MD simulation data. Thus, this study establishes fluoride as a versatile anionic agent to induce disorder in both crystalline and amorphous indium oxide matrices, while modifying the electronic properties of both, but in dissimilar ways.

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