期刊
CHEMISTRY LETTERS
卷 51, 期 7, 页码 683-686出版社
CHEMICAL SOC JAPAN
DOI: 10.1246/cl.220148
关键词
Molecular conductor; Organic semiconductor; Mott insulator
资金
- JSPS KAKENHI [JP20K15356]
- Masuyakinen basic research foundation
- EBARA HATAKEYAMA MEMORIAL FOUNDATION (a public interest incorporated foundation)
- Kato Foundation for Promotion of Science
A new organic donor BEDT-BDS with a greater degree of molecular bending compared to BEDT-BDT has been synthesized, forming a quasi-one-dimensional electronic structure in a radical-cation salt.
A new organic donor, viz. benzo[1,2-g:4,5-g']bis(seleno[2,3-b][1,4]dithiin) (BEDT-BDS), which is a selenium analog of the parent benzo[1,2-g:4,5-g']bis(thieno[2,3-b][1,4]dithiin), has been synthesized. The degree of zigzag-N-shaped molecular bending of BEDT-BDS, which is caused by the selenium substitution, is greater than that of BEDT-BDT. The N-shaped molecular bending in a radical-cation salt (BEDT-BDS)PF6 changes the S center dot center dot center dot S contact distances between the stacked molecules, and thus, a quasi-one-dimensional electronic structure is formed. According to the compositional formula and temperature dependence of resistivity, the PF6 salt is revealed to be a half-filled Mott insulator.
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