期刊
CHEMICAL ENGINEERING JOURNAL
卷 435, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2022.134847
关键词
BiOI/BiOCl; Interface oxygen vacancies; Nonradical
资金
- Hubei Provincial Department of Education [B2021093]
- Central Committee Guides Local Science and Technology Development Project of Hubei Province, China [2019ZYYD068, ZYYD2020000027]
- National Natural Science Foundation of China [21802060]
This study successfully synthesized BiOI/BiOCl heterojunction with rational interface oxygen vacancies (IOVs) concentration and demonstrated the enhanced degradation of electrophilicity contaminants through the nonradical process. By establishing quantitative methods and structure-activity relationship, the contribution of IOVs concentration to catalytic performance was revealed for the first time. This work provides an innovative idea for purifying water pollutants and disinfection through interface defect engineering.
Boosting nonradical (O-1(2), e(-) and h(+)) process to enhance the selective degradation for electrophilicity contam-inants is an ingenious strategy. Herein, BiOI/BiOCl heterojunction with rational interface oxygen vacancies (IOVs) concentration was successfully synthesized by ultrasonic method. Moreover, multi-characterization and interference experimental unveiled that the appropriate IOVs concentration can not only effectively reduce the transport resistance of photo-induced carriers but also boost the nonradical process. Thus, BOC-5 can remove 84% (20 mg/L) tetracycline hydrochloride (TC-HCl) in 1 h and present wonderful insecticidal performance for rotifers. Simultaneously, the quantitative methods of IOVs concentration, the contribution of the active species to the catalytic performance and the contribution of different O-1(2) source to the total O-1(2) were established for the first time. Furthermore, the structure-activity relationship between the IOVs concentration and the catalytic properties was firstly constructed. This work provides an inventive idea to purify water pollutants and disin-festation by boost nonradical process via interface defect engineering.
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