4.7 Article

In-situ interstitial zinc doping-mediated efficient charge separation for ZnIn2S4 nanosheets visible-light photocatalysts towards optimized overall water splitting

期刊

CHEMICAL ENGINEERING JOURNAL
卷 435, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2022.135074

关键词

Photocatalysis; ZnIn2S4 nanosheet; Overall water splitting; Interstitial Zn doping; Short-range disordered

资金

  1. Na-tional Natural Science Foundation of China [21871078, 21676065, 52172206]
  2. Natural Science Foundation of Heilongjiang Province [JQ2019B001]
  3. Shandong Province Natural Science Foundation [ZR2021MB016]

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In this study, ultrathin nanosheets were successfully fabricated with in-situ interstitial zinc doping and short-range disordered structure, enabling overall water splitting without cocatalysts under visible light irradiation. The material possesses abundant active sites and adjustable electronic configurations, enhancing the photocatalytic efficiency.
It is urgent to develop photocatalysts with high efficiency and simple preparation for overall water splitting. Herein, we successfully fabricate ultrathin ZnIn2S4 nanosheets with in-situ interstitial zinc doping and short-range disordered structure (d(Zni)-ZIS) by one-step solvothermal method with magnetic stirring, which can realize overall water splitting without cocatalysts under visible light irradiation. In-situ interstitial Zn (Zn-i) doping can not only induce electrostatic potential difference to accelerate the separation efficiency of photogenerated carriers, but also broaden layer spacing and create short-range disordered structure in nanosheets. Moreover, the disordered regions possess abundant active sites and adjustable electronic configurations, which increase the surface carrier density and enable adequate charges for surface reaction. Consequently, the average photocatalytic H-2 and O-2 evolution rates of the resultant ultrathin d(Zni)-ZIS nanosheets achieve 42.8 and 19.1 mu mol g(-1)h(-1) under visible light irradiation, as well as an apparent quantum yield (AQE) of 1.51% at 420 nm without noble-metal cocatalysts.

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