4.7 Article

Atomic simulation of textured silicon carbide surface ultra-precision polishing

期刊

CERAMICS INTERNATIONAL
卷 48, 期 12, 页码 17034-17045

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2022.02.259

关键词

Surface texture; Surface morphology; Ultra-precision polishing; Silicon carbide materials; Molecular dynamics

资金

  1. National Natural Science Foundation of China [52105178, 12162008]
  2. Guizhou University cultivation project [10]

向作者/读者索取更多资源

This study proposes a new machining method with ultra-high precision for silicon carbide materials. The results show that the use of groove texture can significantly improve the polishing quality.
In view of increasing accuracy requirements and difficult machining characteristics of silicon carbide materials, this paper proposes new machining method with ultra-high precision. Based on improvement of ultra-precision machining quality by textured surface, specific nano texture was machined on silicon carbide surface. Effects of different texture parameters on polishing force, polishing temperature, potential energy, dislocation, stress and friction coefficient were analyzed. Two typical textures (grooves and pits) with different sizes were compared. Simulation results show that surface morphology, polishing force and friction coefficient are improved with the increase in groove depth and pit depth. The smaller the groove spacing, the better the polishing quality and polishing behavior. In addition, groove texture can effectively inhibit the growth of dislocations and defect atoms during polishing. Compared with non-textured surface, textured silicon carbide surface can improve polishing conditions. It is found that groove texture has more beneficial effect on polishing quality than pit texture with the same size.

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