Ferroelectric properties of ZrO2 films deposited on ITO-coated glass

In this work, the ferroelectric characteristics of ZrO2 thin films grown on ITO-coated glass have been investigated. The ferroelectric nature of the ZrO2 films has been studied by polarization-electric field (P-E) hysteresis loops and found to be optimum for the films processed by rapid thermal annealing at 600 degrees C. The increase in the annealing temperature improves the ferroelectric properties through the increase of the in-plane strain that causes the formation of the ferroelectric orthorhombic phase. The formation of the orthorhombic phase was confirmed through high-resolution transmission electron microscopy. The effect of the electric field on the polarization switching kinetics of ZrO2 films has been investigated revealing that the switching kinetics follows the nucleation limited switching (NLS) model. The activation fields estimated from the peak values of the polarization currents (im) and the time (tm) at which im occurs are in good agreement with the values obtained from the switching characteristic time of the NLS model. This work paves the way towards the integration of (pseudo)binary oxide thin films on cheap substrates like glass for the next-generation of non-volatile memories.

Automated summary

This work investigates the ferroelectric characteristics of ZrO2 thin films grown on ITO-coated glass. It is found that the ferroelectric nature of the ZrO2 films is optimized through rapid thermal annealing at 600 degrees C. The increase in annealing temperature improves the ferroelectric properties by increasing the in-plane strain. The effect of electric field on the polarization switching kinetics of ZrO2 films is also studied.