4.7 Article

Optically sensitive isolated silver nano-dots development by broad ion implantation on nitrogen ion-induced pre-patterned silicon nano-templates

期刊

APPLIED SURFACE SCIENCE
卷 578, 期 -, 页码 -

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ELSEVIER
DOI: 10.1016/j.apsusc.2021.152079

关键词

Nano-pyramid; Silver nano-dot; Broad ion beam implantation; SEAS; UV-VIS

资金

  1. Department of Atomic Energy

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Isolated silver nano-dot formation on pre-patterned silicon nitride nano templates using ion bombardment was reported. The presence of the Ag dots significantly enhanced the Raman signal, with a change in light reflectance observed on the surface. The study described the growth mechanism of pyramidal structures by ion bombardment and the process of isolated Ag dot formation.
We report broad ion beam-induced isolated silver nano-dot formation on the pre-patterned silicon nitride nano template. The nano templates are developed and optimized on Si (100) surfaces using N-2(+) ion bombardment at different incidence angles and fluences. Atomic Force Microscopy shows that the well-defined pyramidal structures can be formed by 14 keV, N-2 ion bombardment at incidence angle 70 degrees with ion fluence 2 x 10(18) ions/cm(2). Optical sensitive, implanted Ag nano-dots are placed at selective sites of the patterns by exploiting the geometrical structure of the pattern and local ion implantation angle. Surface chemical analysis by X-ray photoelectron spectroscopy and cross-sectional investigation by transmission electron microscopy (TEM) confirms the presence of isolated Ag dots arrays at the specific sites of the nano-pyramidal template structures. The presence of isolated Ag dots on the silicon/silicon nitride surface shows a significant enhancement of the Raman signal, which further rises by the increase of Ag ion fluence. A change of light reflectance from the substrate surface is also observed due to the presence of Ag dots. The growth mechanism of the pyramidal structure by grazing incidence ion bombardment and the approach of isolated Ag dot formation by the self-masking process as well as optical responses are described.

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