期刊
APPLIED SURFACE SCIENCE
卷 583, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2022.152475
关键词
ZnO whiskers; Gallium; Diffusion doping; Melt-back etching; XPS; Oxygen vacancy
类别
资金
- European Commission [810626]
- Brno University of Technology [FSI-S-20-6485]
- Spanish Ministry of Science and Innovation (AEI/FEDER, EU) [PID2019-107697RB-C42]
- CEITEC Nano Research Infrastructure [ID LM2018110]
- [LM2018110]
This study finds that pre-annealing ZnO in oxygen-poor conditions at low temperature enhances the diffusion of gallium into ZnO crystal lattice and that gallium acts as a reactant causing ZnO etching at diffusion temperatures, which can be a significant hurdle for the post-growth diffusion doping of ZnO nanostructures.
Despite being technologically very attractive, highly-doped zinc oxide whiskers with precisely defined morphology and doping level are difficult to prepare. Here, as an advancing step towards this goal, we show that pre-annealing of ZnO in oxygen-poor conditions (e.g. high vacuum) at low temperature encourages a deeper diffusion of Ga into the ZnO crystal lattice in contrast to ZnO pre-annealed in oxygen-rich conditions. We also demonstrate that gallium acts as a reactant causing ZnO etching at diffusion temperatures, contrary to Al-based doping of ZnO systems. This behaviour, being similar to gallium melt-back etching during GaN epitaxy on silicon, has not been observed for ZnO so far and can represent a significant hurdle for the post-growth diffusion doping of ZnO nanostructures. The paper suggests possible ways how to diminish this effect.
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