Effects of Atomic-Layer-Deposition temperature on the properties of Al2O3 insulators and InAlZnO Thin-Film-Transistors with Dual-Active-Layer structure

The influence of atomic layer deposition (ALD) temperature on the properties of Al2O3 gate insulators and InAlZnO (IAZO) thin film transistors (TFTs) with a dual-active-layer structure was systematically investigated. The 150 degrees C-prepared Al2O3 film had the best surface morphology as well as capacitance and breakdown characteristics, and the corresponding IAZO TFT also showed the optimal overall performance with a high saturation mobility (11.39 cm(2) V-1 s(-1)), a low threshold voltage (0.32 V), a small subthreshold swing (0.13 V dec(-1)) and an ideal on-off current ratio (1.25 x 10(8)). The IAZO TFTs using 150 degrees C-deposited Al2O3 insulator also exhibited excellent illumination reliability and good positive bias stress (PBS) stability. In particular, the band offsets between Al2O3 and IAZO were investigated to better understand the PBS mechanism of our IAZO TFTs.

Automated summary

The research showed that Al2O3 film prepared at 150 degrees C had the best performance, leading to excellent characteristics of IAZO TFTs, including high mobility, low threshold voltage, small subthreshold swing, and ideal on-off current ratio. Additionally, IAZO TFTs with Al2O3 insulator deposited at 150 degrees C exhibited good stability and reliability.