期刊
APPLIED SURFACE SCIENCE
卷 578, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2021.152047
关键词
beta-Ga2O3; NiOx; Heterojunction; F plasma treatment; X-ray photoelectron spectroscopy; Band alignment
类别
资金
- Guangdong Province Key Research and Development [2019B010128001]
- National Natural Science Foundation of China [61774041]
- Shanghai Science and Technology Innovation Program [19520711500]
In this study, the NiOx/β-Ga2O3 heterojunction with F plasma pre-treatment showed improved performance, including reduced reverse current, increased on-current, and improved on-resistance. The observation of restored electrical properties and enhanced temperature stability after thermal cycling suggests great potential for enhancing the performance of gallium oxide-based heterojunctions.
In this work, we demonstrated the NiOx/beta-Ga2O3 heterojunction with reduced reverse current and on-resistance via F plasma pre-treatment. The band offsets and the elemental composition of the heterojunction are investigated by X-ray photoelectron spectroscopy. It shows that the valence and conduction band offsets of the NiOx/p-Ga2O3 heterojunction decrease with F plasma pre-treatment. The on-current of Ni/NiOx/beta-Ga2O3 heterojunction diodes increases from 10(-3) to 11.82 A/cm(2), which corresponds to the on-resistance of 100 to 0.2 Omega cm(2) , and the ideality factor decreases from 2.42 to 1.06. For less than 40 V reverse bias, the leakage current of the heterojunction can be suppressed with F pre-treatment. It is reduced from 10(-5) to 10(-6) A/cm(2) under -20 V bias. In addition, the electrical properties of the heterojunction are restored after thermal cycling. The n-type NiOx and interface F plasma pre-treatment processes exhibit good temperature stability. These observations in the Ni/ NiOx/p-Ga2O3 heterojunction with the F plasma pre-treatment show a great potential in improving the performance of gallium oxide-based heterojunctions.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据