4.7 Article

Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current

期刊

APPLIED SURFACE SCIENCE
卷 578, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2021.152047

关键词

beta-Ga2O3; NiOx; Heterojunction; F plasma treatment; X-ray photoelectron spectroscopy; Band alignment

资金

  1. Guangdong Province Key Research and Development [2019B010128001]
  2. National Natural Science Foundation of China [61774041]
  3. Shanghai Science and Technology Innovation Program [19520711500]

向作者/读者索取更多资源

In this study, the NiOx/β-Ga2O3 heterojunction with F plasma pre-treatment showed improved performance, including reduced reverse current, increased on-current, and improved on-resistance. The observation of restored electrical properties and enhanced temperature stability after thermal cycling suggests great potential for enhancing the performance of gallium oxide-based heterojunctions.
In this work, we demonstrated the NiOx/beta-Ga2O3 heterojunction with reduced reverse current and on-resistance via F plasma pre-treatment. The band offsets and the elemental composition of the heterojunction are investigated by X-ray photoelectron spectroscopy. It shows that the valence and conduction band offsets of the NiOx/p-Ga2O3 heterojunction decrease with F plasma pre-treatment. The on-current of Ni/NiOx/beta-Ga2O3 heterojunction diodes increases from 10(-3) to 11.82 A/cm(2), which corresponds to the on-resistance of 100 to 0.2 Omega cm(2) , and the ideality factor decreases from 2.42 to 1.06. For less than 40 V reverse bias, the leakage current of the heterojunction can be suppressed with F pre-treatment. It is reduced from 10(-5) to 10(-6) A/cm(2) under -20 V bias. In addition, the electrical properties of the heterojunction are restored after thermal cycling. The n-type NiOx and interface F plasma pre-treatment processes exhibit good temperature stability. These observations in the Ni/ NiOx/p-Ga2O3 heterojunction with the F plasma pre-treatment show a great potential in improving the performance of gallium oxide-based heterojunctions.

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