期刊
APPLIED PHYSICS LETTERS
卷 120, 期 11, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0086644
关键词
-
资金
- Department of Atomic Energy (DAE), Government of India
- Department of Science and Technology, Government of India
In this study, we have grown SnTe using a modified method and examined its properties. The results demonstrate that the ground state structure of SnTe can be stabilized in the cubic phase at low temperatures and exhibits typical characteristics of a topological material. This provides potential for SnTe in quantum applications.
SnTe, an archetypical topological crystalline insulator, often shows a transition from a highly symmetric cubic phase to a rhombohedral structure at low temperatures. In order to achieve the cubic phase at low temperatures, we have grown SnTe employing the modified Bridgman method and studied its properties in detail. Analysis of the crystal structure using Laue diffraction and rocking curve measurements shows a high degree of single crystallinity and mosaicity of the sample. The magnetic susceptibility shows diamagnetic behavior, and the specific heat data match phonon contributions typical of a bulk insulator. Resistivity data exhibit metallic conduction similar to two-dimensional systems, and the signature of the structural transition has not been observed down to the lowest temperature studied. Detailed powder x-ray diffraction measurements show a cubic structure in the entire temperature range studied. This is supported by the angle-resolved photoemission data at low temperatures exhibiting a Dirac cone typical of a topological material. These results demonstrate that the ground state structure of SnTe can be stabilized in the cubic phase, providing a promising platform for quantum applications. Published under an exclusive license by NP Publishing.
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