Oxygen vacancy dynamics in monoclinic metallic VO2 domain structures

It was demonstrated recently that the nano-optical and nanoelectronic properties of VO2 can be spatially programmed through the local injection of oxygen vacancies by atomic force microscope writing. In this work, we study the dynamic evolution of the patterned domain structures as a function of the oxygen vacancy concentration and the time. A threshold doping level is identified that is critical for both the metal-insulator transition and the defect stabilization. The diffusion of oxygen vacancies in the monoclinic phase is also characterized, which is directly responsible for the short lifetimes of sub-100 nm domain structures. This information is imperative for the development of oxide nanoelectronics through defect manipulations.

Automated summary

The nano-optical and nanoelectronic properties of VO2 can be programmed through the local injection of oxygen vacancies by atomic force microscope writing. The dynamic evolution of the patterned domain structures is studied in this work, showing the critical threshold doping level for the metal-insulator transition and defect stabilization. The diffusion of oxygen vacancies in the monoclinic phase is characterized, which determines the short lifetimes of sub-100 nm domain structures.