相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。All-Group IV Transferable Membrane Mid-Infrared Photodetectors
Mahmoud R. M. Atalla et al.
ADVANCED FUNCTIONAL MATERIALS (2021)
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors
O. Moutanabbir et al.
APPLIED PHYSICS LETTERS (2021)
Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors
John Wellington John et al.
NANOTECHNOLOGY (2021)
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires
Simone Assali et al.
ACS NANO (2020)
Superior optical (λ ∼ 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si0.5Ge0.5/Si substrates using molecular beam epitaxy
Sudarshan Singh et al.
NANOTECHNOLOGY (2020)
Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors
E. Bouthillier et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)
Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector
Yuekun Yang et al.
NANO LETTERS (2020)
Planar GeSn photodiode for high-detectivity photodetection at 1550nm
Kuo-Chih Lee et al.
APPLIED PHYSICS LETTERS (2020)
Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission
Andrew C. Meng et al.
MATERIALS TODAY (2020)
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate
Shengqiang Xu et al.
OPTICS EXPRESS (2019)
Self-powered MSM deep-ultraviolet β-Ga2O3 photodetector realized by an asymmetrical pair of Schottky contacts
Linpeng Dong et al.
OPTICAL MATERIALS EXPRESS (2019)
Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters
Michael S. Seifner et al.
ACS NANO (2019)
Strain engineering in Ge/GeSn core/shell nanowires
S. Assali et al.
APPLIED PHYSICS LETTERS (2019)
Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
Huong Tran et al.
ACS PHOTONICS (2019)
Self-Driven Metal-Semiconductor-Metal WSe2 Photodetector with Asymmetric Contact Geometries
Changjian Zhou et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Self-powered single semiconductor nanowire photodetector
Shaili Sett et al.
NANOTECHNOLOGY (2018)
Highly Responsive, Polarization Sensitive, Self-Biased Single GeO2-Ge Nanowire Device for Broadband and Low Power Photodetectors
Subhrajit Mukherjee et al.
ACS PHOTONICS (2018)
Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays
S. Assali et al.
NANO LETTERS (2017)
Emission characteristics of self-assembled strained Ge1-xSnx islands for sources in the optical communication region
Rajshekhar Bar et al.
NANOTECHNOLOGY (2017)
One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications-a review
Samit K. Ray et al.
NANOTECHNOLOGY (2017)
High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors
Veerendra Dhyani et al.
SCIENTIFIC REPORTS (2017)
A single crystalline InP nanowire photodetector
Xin Yan et al.
APPLIED PHYSICS LETTERS (2016)
Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies
Thomas R. Harris et al.
JOURNAL OF APPLIED PHYSICS (2016)
Core-Shell Germanium/Germanium Tin Nanowires Exhibiting Room Temperature Direct- and Indirect-Gap Photoluminescence
Andrew C. Meng et al.
NANO LETTERS (2016)
Si-Ge-Sn alloys: From growth to applications
S. Wirths et al.
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS (2016)
Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1-xSnx nanowires
Subhajit Biswas et al.
NATURE COMMUNICATIONS (2016)
Anomalous photoconductive behavior of a single InAs nanowire photodetector
Junshuai Li et al.
APPLIED PHYSICS LETTERS (2015)
Lasing in direct-bandgap GeSn alloy grown on Si
S. Wirths et al.
NATURE PHOTONICS (2015)
Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity
K. Das et al.
NANOSCALE (2014)
All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity
Xi Liu et al.
NATURE COMMUNICATIONS (2014)
High-responsivity GeSn short-wave infrared p-i-n photodetectors
Dongliang Zhang et al.
APPLIED PHYSICS LETTERS (2013)
Achieving direct band gap in germanium through integration of Sn alloying and external strain
Suyog Gupta et al.
JOURNAL OF APPLIED PHYSICS (2013)
Nanowire Photodetectors
Cesare Soci et al.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2010)
Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors
Arthur Zhang et al.
NANO LETTERS (2010)
High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm
Xiong Gong et al.
SCIENCE (2009)
Surface chemistry and electrical properties of germanium nanowires
DW Wang et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2004)