Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer

In this work, we present a GaN-based blue LED construction utilizing bottom tunnel junction (TJ) grown by plasma-assisted molecular beam epitaxy. The setup allows for N-polar-like built-in field alignment while being grown on a Ga-polar substrate. In this study, we present an efficient bottom TJ LED in which the distance between the quantum well and device surface is only 25 nm. This is achieved by the utilization of an n-type current spreading layer consisting of 20 nm thick In0.02Ga0.98N with a Ge doping concentration of 7 x 10(19) cm(-3). Heavily Ge and Mg doped bottom TJs allowed achieving a low LED turn-on voltage of 2.75 V at 20 A/cm(2) and a differential resistivity of 4.7 x 10(-4) omega cm(2) at 1 kA/cm(2). The device maintained high crystal quality and smooth morphology, which allows for its use as a light emitting platform for further integration. Although the p-up reference LED exhibits lower resistivity at high current, its luminous efficiency is lower than for bottom TJ LEDs. Published under an exclusive license by AIP Publishing.

Automated summary

In this study, a novel GaN-based blue LED construction utilizing bottom tunnel junction (TJ) was presented, achieving high luminous efficiency and low resistivity at high current. The device showed promising performance with a low LED turn-on voltage and differential resistivity, maintaining high crystal quality and smooth morphology for potential integration. The p-up reference LED exhibited lower resistivity at high current but had lower luminous efficiency compared to bottom TJ LEDs.