Study and characterization of GaN MOS capacitors: Planar vs trench topographies

Article Physics, Applied

Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices

Shinji Yamada et al.

Summary: A dry-etching technique using inductively coupled plasma reactive ion etching (ICP-RIE) was developed to form an optimal trench shape with highly vertical sidewalls and rounded corners, with SiCl4 reactive gas mixed with Cl-2 gas contributing to the highly vertical trench formation. The optimization of bias power was key to suppressing the formation of subtrenches and achieving natural formation of rounded corners. Multistep-bias etching technique was applied to reduce etching-induced damage, showing promising results for GaN-based vertical T-MOSFETs.

APPLIED PHYSICS LETTERS (2021)

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Review Chemistry, Physical

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Kalparupa Mukherjee et al.

Summary: This study discusses the challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs, focusing on addressing breakdown performance and reliability issues. Leakage and doping considerations are crucial for designing vertical GaN-on-Si stacks with high breakdown voltage. Gate design techniques and pulsed techniques combined with light-assisted de-trapping analyses can improve the dynamic performance of the devices.

MATERIALS (2021)

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Article Materials Science, Multidisciplinary

Vertical GaN Reverse Trench-Gate Power MOSFET and DC-DC Converter

Nilesh Kumar Jaiswal et al.

Summary: A vertical GaN reverse trench-gate power MOSFET (RT-MOSFET) device is proposed, which shows superior performance compared to conventional UT and VT-MOSFET devices in terms of on-state resistance, electrical breakdown voltage, and Baliga's figure of merits. The simulation results also demonstrate that the RT-MOSFET achieves significant energy savings in a DC-DC boost converter circuit at different voltages.

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS (2021)

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Article Physics, Applied