☆ 4.6 Article

Infrared-active phonon modes and static dielectric constants in α-(AlxGa1-x)2O3 (0.18 ≤ x ≤ 0.54) alloys

APPLIED PHYSICS LETTERS (2022)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Materials Science, Multidisciplinary

Infrared dielectric functions and Brillouin zone center phonons of α-Ga2O3 compared to α-Al2O3

Megan Stokey et al.

Summary: The anisotropic dielectric functions, phonon mode frequencies, and parameters of α-Ga2O3 were determined using experimental and computational methods, and compared with previous results. The same calculations were also performed for α-Al2O3, and the properties of the two compounds were compared. The possible evolution and behavior of phonon modes in the ternary alloy system were discussed.

PHYSICAL REVIEW MATERIALS (2022)

添加到收藏夹

Review Physics, Applied

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

Joseph A. Spencer et al.

Summary: This review focuses on the material and electronic properties of conducting and semiconducing oxides, with an emphasis on crystal, electronic, and band structures. It provides a comprehensive compilation of material properties and explores their potential applications in device technology. The review covers a range of oxides including Ga2O3, Al2O3, In2O3, SnO2, ZnO, CdO, NiO, CuO, and Sc2O3, discussing their crystal structures, electrical properties, thermal properties, and phonon properties. Alloys are also considered for their potential in improving and altering certain properties. Overall, the review offers insights into the application space of semiconducting oxide-based devices in electronic and optoelectronic applications.

APPLIED PHYSICS REVIEWS (2022)

添加到收藏夹

Article Multidisciplinary Sciences

Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4-to 8.6-eV alpha-(AlGa)(2)O-3 on m-plane sapphire

Riena Jinno et al.

Summary: Ultrawide-bandgap semiconductors are being developed through molecular beam epitaxy to grow single-crystalline layers of alpha-(AlGa)(2)O(3) alloys. The use of m-plane sapphire crystal is crucial in catalyzing the phase transition of epitaxial layers, leading to wider bandgap materials with structural purity. This advancement successfully stabilizes the largest bandgap materials family to date.

SCIENCE ADVANCES (2021)

添加到收藏夹

Article Physics, Applied

Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3

Matthew Hilfiker et al.

Summary: In this study, a combined approach of generalized spectroscopic ellipsometry and density functional theory was used to analyze the anisotropic dielectric functions of an alpha-Ga2O3 thin film. Multiple direct band-to-band transitions and excitonic contributions were identified, shedding light on the bandgap properties and optical characteristics of the material.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Epitaxial growth of (AlxGa1-x)2O3 thin films on sapphire substrates by plasma assisted pulsed laser deposition

Zewei Chen et al.

Summary: In this study, (AlxGa1-x)(2)O-3 films were successfully grown on a-plane sapphire substrates at low temperatures using plasma assisted PLD. The bandgap of the films was measured using XPS, showing a range from 5.3 to 8.5 eV as the Al concentration varied. This method opens up new possibilities for the application of power devices and functional devices based on (AlxGa1-x)(2)O-3.

AIP ADVANCES (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1-x)2O3

Xinyi Xia et al.

Summary: Valence band offsets for SiO2 deposited by Atomic Layer Deposition on alpha-(AlxGa1-x)(2)O-3 alloys with x ranging from 0.26 to 0.74 were measured by X-ray Photoelectron Spectroscopy. The bandgaps for the alloys ranged from 5.8 eV to 7 eV, with corresponding valence band offsets ranging from -1.2 eV to 0.4 eV. Despite desired nested band alignments for x > 0.5, challenges remain in finding appropriate dielectrics for this ultra-wide bandgap semiconductor system, particularly with negative conduction band offsets observed for lower Al contents.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2021)

添加到收藏夹

Article Physics, Applied

High-frequency and below bandgap anisotropic dielectric constants in α-(AlxGa1-x)2O3 (0 ≤ x ≤ 1)

Matthew Hilfiker et al.

Summary: In this study, an anisotropic dielectric constant investigation of corundum alpha-(AlxGa1-x)(2)O-3 thin films was conducted using Mueller matrix spectroscopic ellipsometry in below bandgap spectral regions. The high-frequency dielectric constants and Cauchy dispersion model were applied to determine the optical properties, showing negative optical birefringence and decreased refractive index upon Al incorporation. Bowing parameters of the dielectric constants were found to be small, indicating subtle changes with composition.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (AlxGa1-x)2O3 alloys

Joel B. Varley

Summary: Alloys between Ga2O3 and Al2O3 exhibit various structural phases and unique optoelectronic properties, making them suitable as ultra-wide bandgap semiconductors. Research focuses on theoretical and experimental results, and analyzes the influence of composition on important optoelectronic variables. The alloy is regarded as a promising platform with the potential to revolutionize power devices.

JOURNAL OF MATERIALS RESEARCH (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Recent progress on the electronic structure, defect, and doping properties of Ga2O3

Jiaye Zhang et al.

APL MATERIALS (2020)

添加到收藏夹

Article Physics, Applied

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

Zhanbo Xia et al.

APPLIED PHYSICS LETTERS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Chlorine-based inductive coupled plasma etching of α-Ga2O3

Zhe (Ashley) Jian et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2019)

添加到收藏夹

Article Physics, Applied

Evaluation of band alignment of α-Ga2o3/α-(AlxGa1-x)2O3 heterostructures by X-ray photoelectron spectroscopy

Takayuki Uchida et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2018)

添加到收藏夹

Editorial Material Physics, Applied

Guest Editorial: The dawn of gallium oxide microelectronics

Masataka Higashiwaki et al.

APPLIED PHYSICS LETTERS (2018)

添加到收藏夹

Article Physics, Applied

Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law

G. T. Dang et al.

APPLIED PHYSICS LETTERS (2018)

添加到收藏夹

Article Physics, Applied

Anisotropic Optical Properties of Metastable (01(1)over-bar2) alpha-Ga2O3 Grown by Plasma-Assisted Molecular Beam Epitaxy

M. Kracht et al.

PHYSICAL REVIEW APPLIED (2018)

添加到收藏夹

Article Electrochemistry

Cheap Ultra-Wide Bandgap Power Electronics? Gallium Oxide May Hold the Answer

Marko J. Tadjer

ELECTROCHEMICAL SOCIETY INTERFACE (2018)

添加到收藏夹

Article Physics, Applied

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ.cm2 grown by MIST EPITAXY®

Masaya Oda et al.

APPLIED PHYSICS EXPRESS (2016)

添加到收藏夹

Article Engineering, Electrical & Electronic

Mist-CVD Grown Sn-Doped α-Ga2O3 MESFETs

Giang T. Dang et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)

添加到收藏夹

Article Materials Science, Multidisciplinary

Development of gallium oxide power devices

Masataka Higashiwaki et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)

添加到收藏夹

Article Instruments & Instrumentation

Invited Article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument

P. Kuehne et al.

REVIEW OF SCIENTIFIC INSTRUMENTS (2014)

添加到收藏夹

Article Physics, Applied

Sensing Using Piezoelectric Chiral Polymer Fiber

Syuhei Ito et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2013)

添加到收藏夹

Article Materials Science, Multidisciplinary

Infrared dielectric anisotropy and phonon modes of sapphire

M Schubert et al.

PHYSICAL REVIEW B (2000)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.