4.6 Article

Resistive switching and photovoltaic response characteristics for the BaTiO3/Nb:SrTiO3 heterostructure

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Summary: Optically controlled ferroelectric memories show promise for energy efficient and fast memory elements. By exploiting the imprint electric field and photovoltaic response in nanometric BaTiO3 films, it is possible to reverse polarization under illumination, trigger resistance changes in tunnel devices, and achieve robust cycling of resistance through dual control of light and electric fields. Designing energy efficient and fast optoelectric neuromorphic systems remains a challenge.

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