Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates

High crystalline quality thick beta-Ga2O3 drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial beta-Ga2O3 thin films grown on Sn-doped (010) and (001) beta-Ga2O3 substrates by LPCVD with a fast growth rate varying from 13 to 21 mu m/h. A higher temperature growth results in the highest reported growth rate to date. Room temperature current density-voltage data for different Schottky diodes are presented, and diode characteristics, such as ideality factor, barrier height, specific onresistance, and breakdown voltage are studied. Temperature dependence (25-250 degrees C) of the ideality factor, barrier height, and specific onresistance is also analyzed from the J - V- T characteristics of the fabricated Schottky diodes.

Automated summary

This paper presents a systematic study on the Schottky diodes fabricated on Si-doped homoepitaxial beta-Ga2O3 thin films grown on different substrates by LPCVD. The results show that higher temperature growth leads to the highest growth rate and the characteristics of the diodes are analyzed and studied.