4.6 Editorial Material

Applied Physics Letters 2022 60th Anniversary Editorial

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Article Physics, Applied

Power and area efficient stochastic artificial neural networks using spin-orbit torque-based true random number generator

Min Song et al.

Summary: Stochastic computing (SC) is an unconventional computing paradigm that offers low-power and area-efficient hardware implementations for Artificial Neural Networks (ANNs).

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Highly efficient charge-to-spin conversion from in situ Bi2Se3/Fe heterostructures

Dapeng Zhu et al.

Summary: The study focused on the SOT efficiency of Bi2Se3/Fe heterostructures, showing that in situ fabrication methods exhibit higher efficiency below 100K compared to ex situ methods, largely due to a thinner interfacial layer and enhanced interface spin transparency.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Spin-orbit torques: Materials, physics, and devices

Xiufeng Han et al.

Summary: This article summarizes the latest progress in spin-orbit torque (SOT) technology and its applications, introduces its basic concepts and related materials, and discusses methods for achieving deterministic switching without an external field. Furthermore, it emphasizes the important applications of this technology in devices such as SOT-MRAM and spin logic.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Optically detected spin-orbit torque ferromagnetic resonance in an in-plane magnetized ellipse

P. S. Keatley et al.

Summary: The study utilized time-resolved scanning Kerr microscopy to perform SOT-FMR measurements on a microscale CoFeB ellipse, revealing asymmetry in FMR peaks under different angles of applied magnetic field and DC current. Additionally, it determined physical parameters such as the damping parameter and the Slonczewski torque parameter.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Field-free spin-orbit torque induced magnetization reversal in a composite free layer with interlayer exchange coupling

Zhou Li et al.

Summary: Researchers proposed a field-free spin-orbit torque magnetic random access memory element using a composite free layer, and investigated the magnetic switching process under different conditions. They achieved a field-free and efficient spin-orbit torque-induced reversal of perpendicular magnetization, which can reduce the switching current density. By adjusting the magnetic anisotropy, multilevel magnetization states can be achieved.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Spin-orbit torque field-effect transistor (SOTFET): Proposal for a magnetoelectric memory

Xiang Li et al.

APPLIED PHYSICS LETTERS (2020)

Editorial Material Physics, Applied

To boldly go: New frontiers for APL

Lesley F. Cohen

APPLIED PHYSICS LETTERS (2020)

Article Physics, Applied

Femtosecond photocurrents at the FeRh/Pt interface

R. Medapalli et al.

APPLIED PHYSICS LETTERS (2020)

Article Physics, Applied

Spin-orbit torque driven four-state switching in splicing structure

Yuhang Song et al.

APPLIED PHYSICS LETTERS (2020)

Article Physics, Applied

Spin-orbit torque as a method for field-free detection of in-plane magnetization switching

Nguyen Huynh Duy Khang et al.

APPLIED PHYSICS LETTERS (2020)

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Editorial: Improvements to Applied Physics Letters to better serve the community

Reuben T. Collins

APPLIED PHYSICS LETTERS (2015)

Editorial Material Physics, Applied

Highlights of the 50-Year History of Applied Physics Letters

Nghi Q. Lam

APPLIED PHYSICS LETTERS (2012)