Growth of α-(AlGa)2O3 alloy thin films on c-sapphire substrates by mist chemical vapor deposition using acetylacetonated Al and Ga solutions

alpha-Ga2O3 is a semi-stable phase of Ga2O3 and is known as an ultra-wide-bandgap semiconductor material. alpha-(AlGa)(2)O-3 alloys are important for their applications in electronic and optoelectronic devices. We investigated the growth mechanism and process of alpha-(AlGa)(2)O-3 alloys by mist chemical vapor deposition using acetylacetonated Al and Ga aqueous solutions. The contribution of acetylacetonated Al ions to the epitaxial growth was investigated. The effects of an anchoring mechanism on the mosaic spread were experimentally evaluated. Investigating 10 (1) over bar4 X-ray diffraction profiles, strain relaxation processes in film formations are discussed. (C) 2022 The Japan Society of Applied Physics

Automated summary

The growth mechanism and process of α-(AlGa)(2)O-3 alloys were investigated using mist chemical vapor deposition, and the contributions of acetylacetonated Al ions and the anchoring mechanism were evaluated.