Charge transport and photodetection properties of Mo-doped MnS thin film

Mo-doped MnS thin film of similar to 100 nm thickness has been deposited using the thermal evaporation technique. Structural and morphological properties have been determined. Temperature-dependent electrical properties have been studied under vacuum conditions in the temperature range 173-423 K. Electrical analysis inferred that the fabricated device follows two types of conduction mechanisms, i.e. thermally activated mechanism (251-423 K) with two activation energies (E-a1 - 0.203 eV and E-a2 - 2.214 eV) and variable range hopping (VRH) conduction mechanism (173-243) K. Light on-off cycles shows the switching action and dependence of the device on the incident light intensity. Light intensity-dependent photodetection properties revealed that current increased with an increase in incident light power density, following the power law with gamma equal to similar to 2.12. Present work shows that Mo-doped MnS-based fabricated devices possess photoresponsivity (similar to 45 mA/W) as well as detectivity (similar to 40.5 x 10(9) Jones).

Automated summary

In this study, Mo-doped MnS thin films with a thickness of about 100 nm were fabricated by thermal evaporation technique. The structural, morphological, and electrical properties of the films were investigated. The results showed that the fabricated devices exhibited two types of conduction mechanisms, namely thermally activated conduction and variable range hopping, and they were also sensitive to light intensity.