☆ 4.8 Review

Recent Progress in 1D Contacts for 2D-Material-Based Devices

ADVANCED MATERIALS (2022)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Chemistry, Multidisciplinary

Heterophase Boundary for Active Hydrogen Evolution in MoTe2

Yongjoon Lee et al.

Summary: This study reports on the promotion of the hydrogen evolution reaction (HER) at heterophase boundaries between the semiconducting 2H and metallic 1T' phases in MoTe2. Local HER investigations at varying lengths of 1D heterophase boundaries show a clear improvement in HER performance with a turnover frequency of 317 s(-1). Kelvin probe force microscopy reveals a surface potential difference of 50 mV across the heterophase boundary, supporting sharp band bending and local charge accumulation for efficient electrochemical catalysis in TMDs.

ADVANCED FUNCTIONAL MATERIALS (2022)

添加到收藏夹

Review Chemistry, Multidisciplinary

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

Xiaochi Liu et al.

Summary: This article discusses the impact of Fermi level pinning (FLP) in 2D semiconductor devices and its causes. The authors indicate that FLP is mainly due to inefficient doping into 2D materials, vdW gap at the metal interface, and hybridized compounds formed under contacting metals. The article further explores the effects of FLP on 2D device performance and methods for improving metallic contact to 2D materials.

ADVANCED MATERIALS (2022)

添加到收藏夹

Review Chemistry, Multidisciplinary

The Road for 2D Semiconductors in the Silicon Age

Shuiyuan Wang et al.

Summary: The fusion of 2D materials with silicon ICs shows potential to drive advanced performance in ICs, overcome challenges in silicon ICs, and create technologies beyond the von Neumann architecture.

ADVANCED MATERIALS (2022)

添加到收藏夹

Review Chemistry, Multidisciplinary

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

Phuong Pham et al.

Summary: A comprehensive review on the recent advances in 2D materials and their heterostructures is presented. These materials, discovered through extensive experimental and theoretical efforts, have shown potential applications in high-frequency electronics and broadband optoelectronics. The review focuses on the engineering of 2D heterostructures and 3D-bulk hybrid systems, highlighting their quantum mechanical responses and discussing future trends for electronics and optoelectronics.

CHEMICAL REVIEWS (2022)

添加到收藏夹

Review Chemistry, Multidisciplinary

Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth

Yi Wan et al.

Summary: This review provides a systematic summary of the critical factors for synthesizing single-orientation 2D layers, with a focus on the role of atomic edge-guided epitaxial growth in the wafer-scale growth of single-crystal 2D layers.

CHEMICAL SOCIETY REVIEWS (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Tunable Spin Injection in High-Quality Graphene with One-Dimensional Contacts

Victor H. Guarochico-Moreira et al.

Summary: Spin injection and tunable spin signal in graphene have been achieved using van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels. At low temperature, spin signals can be enhanced by electrostatic gating.

NANO LETTERS (2022)

添加到收藏夹

Review Chemistry, Multidisciplinary

Latest advance on seamless metal-semiconductor contact with ultralow barrier in 2D-material-based devices

Shengyao Chen et al.

Summary: This paper reviews the recent progress of seamless contacts in 2D-material semiconductors, explores the difficulties and improvement direction of metal-semiconductor contacts, with the aim of improving device performance.

NANO TODAY (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

Contact Resistivity in Edge-Contacted Graphene Field Effect Transistors

Sungwon Lee et al.

Summary: This study demonstrates that edge-contacted graphene devices of multiple stacked 2D hetero-structures with hBN exhibit superior performances in carrier transport and have lower contact resistivity compared to surface-contacted devices.

ADVANCED ELECTRONIC MATERIALS (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

Ultrahigh Anisotropic Transport Properties of Black Phosphorus Field Effect Transistors Realized by Edge Contact

Myeongjin Lee et al.

Summary: The study measured the in-plane electrical conductance of BP FETs in different directions using an edge contact method, finding anisotropies of approximately 5.5 and 7.5. Results showed that edge roughness scattering limited the mobility of BP FETs, while impurity scattering and phonon scattering had different effects on the mobility of BP FETs with top contact at different temperatures.

ADVANCED ELECTRONIC MATERIALS (2022)

添加到收藏夹

Review Chemistry, Multidisciplinary

Developing Graphene-Based Moire Heterostructures for Twistronics

Mengya Liu et al.

Summary: Graphene-based moire heterostructures are important for studying condensed matter physics, especially unconventional superconductors. Key aspects include preparation methods, quality improvement, and topological properties. Physical performances are influenced by factors such as twist angle, strain, and regulation of the dielectric environment.

ADVANCED SCIENCE (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

All-van-der-Waals Barrier-Free Contacts for High-Mobility Transistors

Xiankun Zhang et al.

Summary: This study reported a van-der-Waals barrier-free hole contact between p-type tellurene semiconductor and layered 1T'-WS2 semimetal, achieving a zero Schottky barrier height and high field-effect mobility, providing a feasible strategy for eliminating the Schottky barrier of metal-semiconductor contacts.

ADVANCED MATERIALS (2022)

添加到收藏夹

Article Chemistry, Physical

Improvement of electrical performance using PtSe2/PtTe2 edge contact synthesized by molecular beam epitaxy

Hyeon-Sik Kim et al.

Summary: This study improves the contact resistance between two-dimensional transition-metal dichalcogenides (TMDs) and contact metal through one-dimensional edge contact method. The FETs fabricated by the tellurization method show better on-off ratio and carrier mobility in electrical performance.

APPLIED SURFACE SCIENCE (2022)

添加到收藏夹

Article Chemistry, Physical

Record-high saturation current in end-bond contacted monolayer MoS2 transistors

Jiankun Xiao et al.

Summary: High contact resistance in monolayer MoS2 transistors limits their electrical performance, but a proposed end-bond contact scheme achieves ultra-low contact resistance and high-performance saturation current density.

NANO RESEARCH (2022)

添加到收藏夹

Article Multidisciplinary Sciences

Orderly disorder in magic-angle twisted trilayer graphene

Simon Turkel et al.

Summary: The magic-angle twisted trilayer graphene has shown a potential for engineering strongly correlated flat bands. Using low-temperature scanning tunneling microscopy, researchers have observed a strong reconstruction of the moire lattice in real trilayer samples, leading to the formation of localized twist-angle faults. These localized regions exhibit different electronic structures compared to the background regions, resulting in a doping-dependent, spatially granular electronic landscape.

SCIENCE (2022)

添加到收藏夹

Article Multidisciplinary Sciences

Bridging the gap between atomically thin semiconductors and metal leads

Xiangbin Cai et al.

Summary: Researchers have developed a method to achieve nearly barrier-free electrical contacts between atomically thin transition metal dichalcogenide semiconductors and metal leads. This method increases the efficiency of carrier injection and exhibits robust ohmic behaviors across a wide temperature range. The improved performance of field-effect transistors is reflected in the low contact resistance, high field-effect mobility, and prominent transport characteristics at cryogenic temperatures. This method also allows for the local manipulation of atomic structures and electronic properties for device design.

NATURE COMMUNICATIONS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Interaction- and defect-free van der Waals contacts between metals and two-dimensional semiconductors

Gihyeon Kwon et al.

Summary: High-quality van der Waals contacts can be achieved between metals and two-dimensional semiconductors by depositing a selenium buffer layer before metal deposition, avoiding Fermi-level pinning and improving device performance. The contacts show adherence to the Schottky-Mott rule and result in stable operation and high performance in tungsten diselenide field-effect transistors.

NATURE ELECTRONICS (2022)

添加到收藏夹

Review Physics, Applied

Making clean electrical contacts on 2D transition metal dichalcogenides

Yan Wang et al.

Summary: A key challenge in fabricating devices out of 2D materials is making good electrical contact, especially for TMDs. Lack of high-quality, low-contact-resistance P-type and N-type contacts on TMDs has limited progress towards next-generation low-power devices. This Expert Recommendation provides strategies for making clean van der Waals contacts on monolayered TMD semiconductors and discusses prospects for achieving quantum conductance.

NATURE REVIEWS PHYSICS (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

Electron beam evaporated Au islands as a nanoscale etch mask on few-layer MoS2and fabrication of top-edge hybrid contacts for field-effect transistors

Timothy N. Walter et al.

Summary: Metal contacts to two-dimensional layered semiconductors play a crucial role in FET performance and other applications in nanoelectronics. This study explores the wetting behavior of thin Au films on exfoliated MoS(2) flakes as a nanoscale dry etch mask, leading to edge contacts in addition to top contacts for enhanced carrier injection and lower contact resistance in FETs. The research demonstrates the potential and customization capability of using metal island nanoscale etch masks for engineering FETs with low contact resistance.

NANOTECHNOLOGY (2021)

添加到收藏夹

Review Materials Science, Multidisciplinary

Electrical characterization of 2D materials-based field-effect transistors

Sekhar Babu Mitta et al.

Summary: 2D materials, with their atomic thinness and rich electronic band structure, show great promise for future nanoelectronics; however, the electrical characterization methods for 2D devices need to be revisited to ensure accuracy and applicability.

2D MATERIALS (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Gradual Edge Contact between Mo and MoS2 Formed by Graphene-Masked Sulfurization for High-Performance Field-Effect Transistors

Jong-Hwan Lee et al.

Summary: The study introduces a method to reduce contact resistance between Mo and MoS2 by in situ sulfurization of Mo using H2S gas treatment masked by a patterned graphene gas barrier, resulting in a gradual edge contact between the two materials. This approach significantly enhances the electrical performance of field-effect transistors compared to devices with top contacts, ultimately improving the overall device characteristics.

ACS APPLIED MATERIALS & INTERFACES (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

High Current Density in Monolayer MoS2 Doped by AlOx

Connor J. McClellan et al.

Summary: This study demonstrates a method of low-temperature substoichiometric AlOx doping for monolayer MoS2, achieving high carrier densities and low sheet resistance in transistors. The doped MoS2 devices approach several low-power transistor metrics required by the international technology roadmap, making them promising for future semiconductor applications.

ACS NANO (2021)

添加到收藏夹

Article Physics, Condensed Matter

One- and two-dimensional electrical contacts and transport properties in monolayer black phosphorene-Ni interface

Kehua Zhong et al.

Summary: This paper investigates the impact of contact types between monolayer black phosphorene (BP) and metal nickel (Ni) electrodes on device performance using first-principles calculations and density functional theory coupled with nonequilibrium Green's function method. The results suggest that edge contact type can reduce contact resistance and improve device performance.

JOURNAL OF PHYSICS-CONDENSED MATTER (2021)

添加到收藏夹

Article Chemistry, Physical

Robust transport of charge carriers in in-plane 1T′-2H MoTe2 homojunctions with ohmic contact

Donglin Lu et al.

Summary: The study demonstrates the fabrication of 2D in-plane 1T'-2H MoTe2 homojunctions with promising ohmic contact properties for reducing energy dissipation in electronic devices. The robust transport of charge carriers without Fermi-level pinning in the homojunction can be well described by Poisson equation and band alignment, indicating the potential of phase engineering in constructing ohmic contacts for device applications.

NANO RESEARCH (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Unanticipated Polarity Shift in Edge-Contacted Tungsten-Based 2D Transition Metal Dichalcogenide Transistors

Hattan Abuzaid et al.

Summary: Creating metal edge contacts in WSe2 and WS2 transistors produced unexpected results, with a polarity shift observed in Ti-WS2 devices and comparable p-branch-dominant performance in WSe2 using three different metal contact materials. The presence of a residual layer of W beneath the metal contacts, even after substrate over-etching, suggests significant implications for the design of tungsten-based, edge-contacted TMD transistors.

IEEE ELECTRON DEVICE LETTERS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Direct Optoelectronic Imaging of 2D Semiconductor-3D Metal Buried Interfaces

Kiyoung Jo et al.

Summary: This study reports the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a metal-assisted transfer technique. Contacting MoS2 with metal induces strain and charge transfer, resulting in improved contact resistance.

ACS NANO (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

High-performance ambipolar MoS2 transistor enabled by indium edge contacts

Hai Yen Le Thi et al.

Summary: This study demonstrates the advantage of integrating 1D indium metal contact with MoS2 fully encapsulated within hexagonal boron nitride, showing high-quality electrical performance and analyzing the charge-transport mechanism in detail. The results are promising for using air-sensitive material heterostructures and designing trending flexible, transparent electronic wearable devices at a large scale.

NANOTECHNOLOGY (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Tunable strongly coupled superconductivity in magic-angle twisted trilayer graphene

Jeong Min Park et al.

Summary: Moire superlattices have become a platform for studying correlated physics and superconductivity with unprecedented tunability. This study on magic-angle twisted trilayer graphene reveals a better tunability of electronic structure and superconducting properties than magic-angle twisted bilayer graphene, with implications for the understanding of strongly coupled superconductivity. The results suggest that the system can be electrically tuned close to the crossover to a two-dimensional Bose-Einstein condensate, indicating the potential for revolutionizing applications of superconductivity.

NATURE (2021)

添加到收藏夹

Article Chemistry, Physical

Chern insulators, van Hove singularities and topological flat bands in magic-angle twisted bilayer graphene

Shuang Wu et al.

Summary: In magic-angle twisted bilayer graphene, doping-induced Lifshitz transitions and van Hove singularities lead to the emergence of correlation-induced gaps and topologically non-trivial subbands. With the presence of a magnetic field, quantized Hall plateaus reveal the subband topology and signal the emergence of Chern insulators with Chern numbers. Additionally, a van Hove singularity at a filling of 3.5 suggests the possibility of a fractional Chern insulator, accompanied by a crossover from low-temperature metallic to high-temperature insulating behavior.

NATURE MATERIALS (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Benchmarking monolayer MoS2 and WS2 field-effect transistors

Amritanand Sebastian et al.

Summary: The study benchmarks device-to-device variation in FETs based on MoS2 and WS2, showing consistent performance and record high carrier mobility in WS2 FETs.

NATURE COMMUNICATIONS (2021)

添加到收藏夹

Article Chemistry, Physical

Dimensionality-Reduced Fermi Level Pinning in Coplanar 2D Heterojunctions

Henry Yu et al.

Summary: The electronic transport through a metal|semiconductor heterojunction is mainly determined by the Schottky barrier, with the pinning strength in 3D structures depending on the ratio between interface quantum capacitance and metal surface capacitance. In 2D structures, the interface dipole does not affect band alignment but influences the Schottky barrier and transport. The turn-on voltage and pinning strength in 2D contacts are affected by the physical parameter l/lambda(D), the ratio between interface width and thermal de Broglie wavelength.

JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2021)

添加到收藏夹

Review Engineering, Electrical & Electronic

Transistors based on two-dimensional materials for future integrated circuits

Saptarshi Das et al.

Summary: This paper examines the development of field-effect transistors based on two-dimensional materials for VLSI technology, highlighting the challenges that need to be addressed such as reducing contact resistance, stable doping schemes, mobility engineering, and high-k dielectric integration. The review emphasizes the importance of large-area growth of uniform 2D layers in ensuring low defect density and clean interfaces. Furthermore, potential applications of 2D transistors in various futuristic technologies are discussed.

NATURE ELECTRONICS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide

Min Sup Choi et al.

Summary: Doped graphene using a monolayer of tungsten oxyselenide can significantly enhance room-temperature mobility and control hole density, showing promise for applications in next-generation electronic and photonic devices.

NATURE ELECTRONICS (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Ultralow contact resistance between semimetal and monolayer semiconductors

Pin-Chun Shen et al.

Summary: The article discusses achieving ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides, suppressing metal-induced gap states and significantly reducing contact resistance. Experimental results demonstrate zero Schottky barrier height and high on-state current density on multilayer MoS2.

NATURE (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

Xiaolong Xu et al.

Summary: The study presents a method for synthesizing wafer-scale single-crystalline 2H MoTe2 semiconductors on an amorphous insulating substrate, with excellent uniformity and 100% device yield. The 2D single-crystalline film can serve as a template for further rapid epitaxy in a vertical manner.

SCIENCE (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

One-dimensional edge contact to encapsulated MoS2 with a superconductor

A. Seredinski et al.

Summary: The study found that using sputtered MoRe as a contact method for encapsulated MoS2 poses challenges, as the contact transparency is poor and the devices do not support a measurable supercurrent down to 3 K. This has implications for future fabrication recipes.

AIP ADVANCES (2021)

添加到收藏夹

Review Nanoscience & Nanotechnology

Phase transitions in 2D materials

Wenbin Li et al.

Summary: The text discusses the current status, characteristics, and application prospects of phase transitions in two-dimensional materials, emphasizing the thermodynamic and kinetic features of phase transitions in two-dimensional materials, as well as the potential technological value of phase transitions.

NATURE REVIEWS MATERIALS (2021)

添加到收藏夹

Article Multidisciplinary Sciences

In-sensor reservoir computing for language learning via two-dimensional memristors

Linfeng Sun et al.

Summary: This study presents a sensor reservoir computing approach for language learning, utilizing two-dimensional memristors to achieve high dimensionality, nonlinearity, and fading memory. With an accuracy of 91% in classifying short sentences, it offers a low training cost and real-time solution for processing temporal and sequential signals in machine learning applications at the edge.

SCIENCE ADVANCES (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

One-Step Synthesis of NbSe2/Nb-Doped-WSe2 Metal/Doped-Semiconductor van der Waals Heterostructures for Doping Controlled Ohmic Contact

Van Tu Vu et al.

Summary: In this study, NbSe2/Nb-doped-WSe2 metal-doped-semiconductor vdWHs were successfully synthesized using a one-step approach, allowing for precise control of doping concentration and reduced contact resistance. The method shows potential for guiding the synthesis of various M/d-S vdWHs and applications in future high-performance integrated circuits.

ACS NANO (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Anomalous Dimensionality-Driven Phase Transition of MoTe2 in Van der Waals Heterostructure

Huije Ryu et al.

Summary: This study discusses the characteristics of phase transition in 2D materials, demonstrates the phase transition properties of MoTe2 at different layers, and explores how to control the vertical and lateral phase transitions of MoTe2 by inserting graphene layers and controlling the thickness of heterostructures.

ADVANCED FUNCTIONAL MATERIALS (2021)

添加到收藏夹

Review Chemistry, Multidisciplinary

Emerging 2D Memory Devices for In-Memory Computing

Lei Yin et al.

Summary: The paper reviews the recent progress of 2D memory devices for in-memory computing, describing their operation mechanisms, memory characteristics, and weighing their pros and cons. It also presents their versatile applications in in-memory computing technology, and discusses the current challenges and potential strategies for future 2D in-memory computing systems.

ADVANCED MATERIALS (2021)

添加到收藏夹

Article Chemistry, Physical

All-parylene flexible wafer-scale graphene thin film transistor

Maria Kim et al.

Summary: By using the same polymer layer for both the transfer of graphene and the flexible substrate, this study successfully produced graphene thin film transistors on a wafer scale with low gate bias and high mechanical resilience.

APPLIED SURFACE SCIENCE (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Minimum Contact Resistance in Monoelemental 2D Material Nanodevices With Edge-Contacts

Mirko Poljak et al.

Summary: Atomistic quantum transport device simulations were used to investigate the contact resistance in monoelemental 2D material nanoribbon MOSFETs with edge contacts. The study found that using moderately interacting metallic materials minimized RC, with the lowest RC values being around 150-430 Omega . mu m in graphene, silicene, germanene, and phosphorene nanodevices.

IEEE ELECTRON DEVICE LETTERS (2021)

添加到收藏夹

Article Multidisciplinary Sciences

An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations

Yin Wang et al.

Summary: The research proposes a new circuit architecture that utilizes MoS2 transistors for efficient in-memory computing, enabling high-capacity MAC operations in a small area. By storing multi-level voltages and combining analog computation, tasks such as image recognition are achieved.

NATURE COMMUNICATIONS (2021)

添加到收藏夹

Article Chemistry, Physical

Metallization-Induced Quantum Limits of Contact Resistance in Graphene Nanoribbons with One-Dimensional Contacts

Mirko Poljak et al.

Summary: The study reveals that metallization decreases transmission and conductance, and can either enlarge or diminish the transport gap depending on GNR dimensions. Additionally, 1D edge contacts and size engineering can be utilized to tune the R-C in GNRs to values lower than graphene.

MATERIALS (2021)

添加到收藏夹

Article Physics, Applied

One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across MoS2/Metal Interfaces

Kamyar Parto et al.

Summary: Edge contacts to 2D MoS2 exhibit stronger pinning to charge-neutrality level close to the valence band due to intrinsic terminated edge states, leading to p-type characteristics in contrast to top contacts. Despite being atomically thin one-dimensional interfaces, edge contacts in MoS2 outperform top contacts in p-type conduction.

PHYSICAL REVIEW APPLIED (2021)

添加到收藏夹

Review Materials Science, Multidisciplinary

Advance Optical Properties and Emerging Applications of 2D Materials

Partha Kumbhakar et al.

Summary: This article provides an overview of the optical properties and applications of 2D materials, highlighting studies on linear and nonlinear optical properties, emission characteristics, and efforts in developing materials with intensive emission properties. It also emphasizes the impressive optical sensitivity of 2D MXene and perovskite oxides for next-generation devices.

FRONTIERS IN MATERIALS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Fast response photogating in monolayer MoS2 phototransistors

Daniel Vaquero et al.

Summary: This study investigates the photoresponse of fully h-BN encapsulated monolayer (1L) MoS2 phototransistors and identifies a rapidly-responding photogating effect mechanism. By fitting the power dependence of this photogating effect and estimating the energy level of the traps involved, it is found that the traps are compatible with shallow traps in MoS2 caused by sulfur vacancies.

NANOSCALE (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant

Abhinandan Borah et al.

Summary: This study reports the use of tungsten oxyselenide as a dopant to achieve the lowest total p-type contact resistance and high dopant density in sub-5 nm thin WSe2. The doping remains active at low temperatures and shows promising stability, leading to significant improvement in device characteristics and potential for high-performance p-type transistors.

ACS APPLIED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Review Materials Science, Multidisciplinary

Enhancing light-matter interaction in 2D materials by optical micro/nano architectures for high-performance optoelectronic devices

Li Tao et al.

Summary: This review discusses various strategies for enhancing light-matter interaction in 2D materials, including plasmonic effects, waveguides, optical cavities, and reflection architectures. Current advances in high-performance 2D material optoelectronic devices assisted by these strategies are outlined, along with future challenges and opportunities in micro/nano photonic structure designs for 2D material devices.

INFOMAT (2021)

添加到收藏夹

Review Chemistry, Multidisciplinary

Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities

Shi-Jun Liang et al.

ADVANCED MATERIALS (2020)

添加到收藏夹

Article Multidisciplinary Sciences

Helical quantum Hall phase in graphene on SrTiO3

Louis Veyrat et al.

SCIENCE (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer

Kraig Andrews et al.

ACS NANO (2020)

添加到收藏夹

Review Materials Science, Multidisciplinary

Transfer assembly for two-dimensional van der Waals heterostructures

Sidi Fan et al.

2D MATERIALS (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

High-Electric-Field-Induced Phase Transition and Electrical Breakdown of MoTe2

Changsik Kim et al.

ADVANCED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Article Physics, Multidisciplinary

Independent superconductors and correlated insulators in twisted bilayer graphene

Yu Saito et al.

NATURE PHYSICS (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Strongly adhesive dry transfer technique for van der Waals heterostructure

Suhan Son et al.

2D MATERIALS (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Tuning transport across MoS2/graphene interfaces via as-grown lateral heterostructures

Shruti Subramanian et al.

NPJ 2D MATERIALS AND APPLICATIONS (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

Woong Huh et al.

ADVANCED MATERIALS (2020)

添加到收藏夹

Article Multidisciplinary Sciences

Superconductivity in metallic twisted bilayer graphene stabilized by WSe2

Harpreet Singh Arora et al.

NATURE (2020)

添加到收藏夹

Review Nanoscience & Nanotechnology

Two-dimensional materials for next-generation computing technologies

Chunsen Liu et al.

NATURE NANOTECHNOLOGY (2020)

添加到收藏夹

Article Multidisciplinary Sciences

Graphene-based Josephson junction microwave bolometer

Gil-Ho Lee et al.

NATURE (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Vertical Integration of 2D Building Blocks for All-2D Electronics

Jian Tang et al.

ADVANCED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

Na Li et al.

NATURE ELECTRONICS (2020)

添加到收藏夹

Article Physics, Multidisciplinary

Excitons, trions and Rydberg states in monolayer MoS2 revealed by low-temperature photocurrent spectroscopy

Daniel Vaquero et al.

COMMUNICATIONS PHYSICS (2020)

添加到收藏夹

Review Chemistry, Multidisciplinary

Recent progress of TMD nanomaterials: phase transitions and applications

H. H. Huang et al.

NANOSCALE (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-Quality Electrostatically Defined Hall Bars in Monolayer Graphene

Rebeca Ribeiro-Palau et al.

NANO LETTERS (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting

Xu Zhang et al.

NATURE (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Van der Waals integration before and beyond two-dimensional materials

Yuan Liu et al.

NATURE (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Yan Wang et al.

NATURE (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS2-Metal Junction

Zheng Yang et al.

ADVANCED MATERIALS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott Limit

Samuel W. LaGasse et al.

ADVANCED MATERIALS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Defect-Mediated Phase Transformation in Anisotropic Two-Dimensional PdSe2 Crystals for Seamless Electrical Contacts

Akinola D. Oyedele et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2019)

添加到收藏夹

Article Chemistry, Physical

Disorder in van der Waals heterostructures of 2D materials

Daniel Rhodes et al.

NATURE MATERIALS (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Quantum parity Hall effect in Bernal-stacked trilayer graphene

Petr Stepanov et al.

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

End-Bonded Metal Contacts on WSe2 Field-Effect Transistors

Chun-Hao Chu et al.

ACS NANO (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts

Zhihui Cheng et al.

NANO LETTERS (2019)

添加到收藏夹

Review Nanoscience & Nanotechnology

Recent Advances in 2D Lateral Heterostructures

Jianwei Wang et al.

NANO-MICRO LETTERS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Vertical Heterophase for Electrical, Electrochemical, and Mechanical Manipulations of Layered MoTe2

Yonas Assefa Eshete et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

One-Dimensional Edge Contacts to a Monolayer Semiconductor

Achint Jain et al.

NANO LETTERS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Scaling-up Atomically Thin Coplanar Semiconductor-Metal Circuitry via Phase Engineered Chemical Assembly

Xiaolong Xu et al.

NANO LETTERS (2019)

添加到收藏夹

Review Multidisciplinary Sciences

Graphene and two-dimensional materials for silicon technology

Deji Akinwande et al.

NATURE (2019)

添加到收藏夹

Review Nanoscience & Nanotechnology

2D materials for quantum information science

Xiaolong Liu et al.

NATURE REVIEWS MATERIALS (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Correlated insulating and superconducting states in twisted bilayer graphene below the magic angle

Emilio Codecido et al.

SCIENCE ADVANCES (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Scalable Two-Dimensional Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo2C)/-Dichalcogenide (MoS2)

Seunghyuk Choi et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors

Homin Choi et al.

ACS NANO (2019)

添加到收藏夹

Article Physics, Applied

Transient characteristics of back-gated multilayer MoS2 and WSe2 channel n-type metal oxide semiconductor field effect transistors: A comparative study

Hui Shen et al.

JOURNAL OF APPLIED PHYSICS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Improved Electrical Contact Properties of MoS2-Graphene Lateral Heterostructure

Woonggi Hong et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ohmic Contact in 2D Semiconductors via the Formation of a Benzyl Viologen Interlayer

Dewu Yue et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

Sang-Soo Chee et al.

ADVANCED MATERIALS (2019)

添加到收藏夹

Article Chemistry, Physical

Electric-field induced structural transition in vertical MoTe2- and Mo1-xWxTe2-based resistive memories

Feng Zhang et al.

NATURE MATERIALS (2019)

添加到收藏夹

Article Chemistry, Physical

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing

Xiaojian Zhu et al.

NATURE MATERIALS (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Coherent control of a hybrid superconducting circuit made with graphene-based van der Waals heterostructures

Joel I-Jan Wang et al.

NATURE NANOTECHNOLOGY (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts

Penglei Li et al.

MATERIALS LETTERS (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Thermal radiation control from hot graphene electrons coupled to a photonic crystal nanocavity

Ren-Jye Shiue et al.

NATURE COMMUNICATIONS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ultralow Specific Contact Resistivity in Metal-Graphene Junctions via Contact Engineering

Vikram Passi et al.

ADVANCED MATERIALS INTERFACES (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

Xiang Zhang et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography

Xiaorui Zheng et al.

NATURE ELECTRONICS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Transferred via contacts as a platform for ideal two-dimensional transistors

Younghun Jung et al.

NATURE ELECTRONICS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Simultaneous synthesis and integration of two-dimensional electronic components

Qi Zhang et al.

NATURE ELECTRONICS (2019)

添加到收藏夹

Review Chemistry, Multidisciplinary

Recent advances in plasma modification of 2D transition metal dichalcogenides

Haiyan Nan et al.

NANOSCALE (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo2C/MoS2 Hybrid Structure via Chemical Conversion of Molybdenum Disulfide

Jaeho Jeon et al.

ACS NANO (2018)

添加到收藏夹

Review Chemistry, Multidisciplinary

Light and Matter Interaction in Two-Dimensional Atomically Thin Films

Rajesh Kumar Ulaganathan et al.

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN (2018)

添加到收藏夹

Review Chemistry, Multidisciplinary

Contact engineering for 2D materials and devices

Daniel S. Schulman et al.

CHEMICAL SOCIETY REVIEWS (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

On Low-Resistance Contacts to 2-D MoTe2 by Crystalline Phase Junctions

Zhipeng Dong et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ultrafast Graphene Light Emitters

Young Duck Kim et al.

NANO LETTERS (2018)

添加到收藏夹

Article Multidisciplinary Sciences

Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions

Yuan Liu et al.

NATURE (2018)

添加到收藏夹

Article Multidisciplinary Sciences

Unconventional superconductivity in magic-angle graphene superlattices

Yuan Cao et al.

NATURE (2018)

添加到收藏夹

Review Multidisciplinary Sciences

Two-dimensional semiconductors in the regime of strong light-matter coupling

Christian Schneider et al.

NATURE COMMUNICATIONS (2018)

添加到收藏夹

Article Multidisciplinary Sciences

Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts

Jinsong Xu et al.

NATURE COMMUNICATIONS (2018)

添加到收藏夹

Article Multidisciplinary Sciences

Observation of the quantum valley Hall state in ballistic graphene superlattices

Katsuyosih Komatsu et al.

SCIENCE ADVANCES (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

Himadri Pandey et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

添加到收藏夹

Article Chemistry, Multidisciplinary

Supercurrent and multiple Andreev reflections in micrometer-long ballistic graphene Josephson junctions

Mengjian Zhu et al.

NANOSCALE (2018)

添加到收藏夹

Article Multidisciplinary Sciences

Correlated insulator behaviour at half-filling in magic-angle graphene superlattices

Yuan Cao et al.

NATURE (2018)

添加到收藏夹

Article Multidisciplinary Sciences

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Jangyup Son et al.

NATURE COMMUNICATIONS (2018)

添加到收藏夹

Article Multidisciplinary Sciences

A ballistic graphene superconducting microwave circuit

Felix E. Schmidt et al.

NATURE COMMUNICATIONS (2018)

添加到收藏夹

Article Physics, Applied

Atomistic Insight into the Formation of Metal-Graphene One-Dimensional Contacts

Bernhard Kretz et al.

PHYSICAL REVIEW APPLIED (2018)

添加到收藏夹

Article Chemistry, Multidisciplinary

Strain-Engineering of Twist-Angle in Graphene/hBN Superlattice Devices

Adolfo De Sanctis et al.

NANO LETTERS (2018)

添加到收藏夹

Article Multidisciplinary Sciences

Resonant terahertz detection using graphene plasmons

Denis A. Bandurin et al.

NATURE COMMUNICATIONS (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Robust memristors based on layered two-dimensional materials

Miao Wang et al.

NATURE ELECTRONICS (2018)

添加到收藏夹

Article Materials Science, Multidisciplinary

1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures

Bogdan Karpiak et al.

2D MATERIALS (2018)

添加到收藏夹

Article Materials Science, Multidisciplinary

Observation of bright and dark exciton transitions in monolayer MoSe2 by photocurrent spectroscopy

Jorge Quereda et al.

2D MATERIALS (2018)

添加到收藏夹

Article Nanoscience & Nanotechnology

Electrical devices from top-down structured platinum diselenide films

Chanyoung Yim et al.

NPJ 2D MATERIALS AND APPLICATIONS (2018)

添加到收藏夹

Article Chemistry, Physical

Thermoelectric detection and imaging of propagating graphene plasmons

Mark B. Lundeberg et al.

NATURE MATERIALS (2017)

添加到收藏夹

Article Chemistry, Physical

Structural Transformations in Two-Dimensional Transition-Metal Dichalcogenide MoS2 under an Electron Beam: Insights from First-Principles Calculations

Silvan Kretschmer et al.

JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Argon Plasma Induced Phase Transition in Monolayer MoS2

Jianqi Zhu et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

Xu Cui et al.

NANO LETTERS (2017)

添加到收藏夹

Article Multidisciplinary Sciences

Structural phase transition in monolayer MoTe2 driven by electrostatic doping

Ying Wang et al.

NATURE (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

Coplanar semiconductor-metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy

Ji Ho Sung et al.

NATURE NANOTECHNOLOGY (2017)

添加到收藏夹

Article Physics, Multidisciplinary

Frictional Magneto-Coulomb Drag in Graphene Double-Layer Heterostructures

Xiaomeng Liu et al.

PHYSICAL REVIEW LETTERS (2017)

添加到收藏夹

Review Chemistry, Physical

The role of contact resistance in graphene field-effect devices

Filippo Giubileo et al.

PROGRESS IN SURFACE SCIENCE (2017)

添加到收藏夹

Article Physics, Multidisciplinary

Excitonic Linewidth Approaching the Homogeneous Limit in MoS2-Based van der Waals Heterostructures

F. Cadiz et al.

PHYSICAL REVIEW X (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Laser-Assisted Nanowelding of Graphene to Metals: An Optical Approach toward Ultralow Contact Resistance

Kamran Keramatnejad et al.

ADVANCED MATERIALS INTERFACES (2017)

添加到收藏夹

Article Multidisciplinary Sciences

Mach-Zehnder interferometry using spin- and valley-polarized quantum Hall edge states in graphene

Di S. Wei et al.

SCIENCE ADVANCES (2017)

添加到收藏夹

Article Multidisciplinary Sciences

Chemical Stability of Graphene Coated Silver Substrates for Surface-Enhanced Raman Scattering

Seiya Suzuki et al.

SCIENTIFIC REPORTS (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits

Michael G. Stanford et al.

ADVANCED FUNCTIONAL MATERIALS (2017)

添加到收藏夹

Article Physics, Multidisciplinary

Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal

Mehrdad Shaygan et al.

ANNALEN DER PHYSIK (2017)

添加到收藏夹

Article Chemistry, Physical

Properties of synthetic epitaxial graphene/molybdenum disulfide lateral heterostructures

Shruti Subramanian et al.

CARBON (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Carrier-Type Modulation and Mobility Improvement of Thin MoTe2

Deshun Qu et al.

ADVANCED MATERIALS (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors

Byoung Hee Moon et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

添加到收藏夹

Article Materials Science, Multidisciplinary

Electronic transport across metal-graphene edge contact

Cheng Gong et al.

2D MATERIALS (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

Changsik Kim et al.

ACS NANO (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

Hyung-Youl Park et al.

ADVANCED MATERIALS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2

Seunghyun Lee et al.

NANO LETTERS (2016)

添加到收藏夹

Article Physics, Multidisciplinary

Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene

M. Ben Shalom et al.

NATURE PHYSICS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Atomically Thin Ohmic Edge Contacts Between Two-Dimensional Materials

Marcos H. D. Guimaraes et al.

ACS NANO (2016)

添加到收藏夹

Review Chemistry, Multidisciplinary

Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions

Yang Xu et al.

ACS NANO (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Origin of Contact Resistance at Ferromagnetic Metal-Graphene Interfaces

Khoong Hong Khoo et al.

ACS NANO (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

Jian Gao et al.

ADVANCED MATERIALS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Parallel Stitching of 2D Materials

Xi Ling et al.

ADVANCED MATERIALS (2016)

添加到收藏夹

Article Chemistry, Physical

All-graphene edge contacts: Electrical resistance of graphene T-junctions

Kare Wedel Jacobsen et al.

CARBON (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

Hsun-Jen Chuang et al.

NANO LETTERS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam

Y. Katagiri et al.

NANO LETTERS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

Chris D. English et al.

NANO LETTERS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

Mahito Yamamoto et al.

NANO LETTERS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Passivated ambipolar black phosphorus transistors

Dewu Yue et al.

NANOSCALE (2016)

添加到收藏夹

Article Nanoscience & Nanotechnology

Large-scale chemical assembly of atomically thin transistors and circuits

Mervin Zhao et al.

NATURE NANOTECHNOLOGY (2016)

添加到收藏夹

Article Materials Science, Multidisciplinary

Making one-dimensional electrical contacts to molybdenum disulfide-based heterostructures through plasma etching

Yu Chai et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2016)

添加到收藏夹

Article Physics, Multidisciplinary

Two-dimensional van der Waals materials

Pulickel Ajayan et al.

PHYSICS TODAY (2016)

添加到收藏夹

Article Engineering, Electrical & Electronic

Contact resistance study of various metal electrodes with CVD graphene

Amit Gahoi et al.

SOLID-STATE ELECTRONICS (2016)

添加到收藏夹

Article Multidisciplinary Sciences

Semiconductor-inspired design principles for superconducting quantum computing

Yun-Pil Shim et al.

NATURE COMMUNICATIONS (2016)

添加到收藏夹

Article Multidisciplinary Sciences

The hot pick-up technique for batch assembly of van der Waals heterostructures

Filippo Pizzocchero et al.

NATURE COMMUNICATIONS (2016)

添加到收藏夹

Review Nanoscience & Nanotechnology

Van der Waals heterostructures and devices

Yuan Liu et al.

NATURE REVIEWS MATERIALS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride

Nicholas Petrone et al.

ACS NANO (2015)

添加到收藏夹

Article Physics, Applied

Nondestructive imaging of buried interfaces in SiC and GaN Schottky contacts using scanning internal photoemission microscopy

Kenji Shiojima et al.

APPLIED PHYSICS EXPRESS (2015)

添加到收藏夹

Article Physics, Applied

Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern

Chunhum Cho et al.

APPLIED PHYSICS LETTERS (2015)

添加到收藏夹

Review Chemistry, Multidisciplinary

Phase engineering of transition metal dichalcogenides

Damien Voiry et al.

CHEMICAL SOCIETY REVIEWS (2015)

添加到收藏夹

Article Engineering, Electrical & Electronic

Properties of Self-Aligned Short-Channel Graphene Field-Effect Transistors Based on Boron-Nitride-Dielectric Encapsulation and Edge Contacts

Tarun Chari et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Edge contacts of graphene formed by using a controlled plasma treatment

D. W. Yue et al.

NANOSCALE (2015)

添加到收藏夹

Review Chemistry, Physical

Electrical contacts to two-dimensional semiconductors

Adrien Allain et al.

NATURE MATERIALS (2015)

添加到收藏夹

Article Nanoscience & Nanotechnology

Ballistic Josephson junctions in edge-contacted graphene

V. E. Calado et al.

NATURE NANOTECHNOLOGY (2015)

添加到收藏夹

Article Nanoscience & Nanotechnology

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

Xu Cui et al.

NATURE NANOTECHNOLOGY (2015)

添加到收藏夹

Article Physics, Multidisciplinary

Bandgap opening in few-layered monoclinic MoTe2

Dong Hoon Keum et al.

NATURE PHYSICS (2015)

添加到收藏夹

Article Physics, Multidisciplinary

Semiconductor-Nanowire-Based Superconducting Qubit

T. W. Larsen et al.

PHYSICAL REVIEW LETTERS (2015)

添加到收藏夹

Article Multidisciplinary Sciences

Phase patterning for ohmic homojunction contact in MoTe2

Suyeon Cho et al.

SCIENCE (2015)

添加到收藏夹

Article Materials Science, Multidisciplinary

HfO2 on UV-O3 exposed transition metal dichalcogenides: interfacial reactions study

Angelica Azcatl et al.

2D MATERIALS (2015)

添加到收藏夹

Article Materials Science, Multidisciplinary

Environmental instability of few-layer black phosphorus

Joshua O. Island et al.

2D MATERIALS (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

Wei Sun Leong et al.

ACS NANO (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts

Wei Sun Leong et al.

ACS NANO (2014)

添加到收藏夹

Article Chemistry, Multidisciplinary

Understanding the Electrical Impact of Edge Contacts in Few-Layer Graphene

Tao Chu et al.

ACS NANO (2014)

添加到收藏夹

Article Physics, Applied

Improvement of graphene-metal contact resistance by introducing edge contacts at graphene under metal

Seung Min Song et al.

APPLIED PHYSICS LETTERS (2014)

添加到收藏夹

Article Engineering, Electrical & Electronic

MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts

Yuchen Du et al.

IEEE ELECTRON DEVICE LETTERS (2014)

添加到收藏夹

Article Physics, Applied

Modulation of contact resistance between metal and graphene by controlling the graphene edge, contact area, and point defects: An ab initio study

Bo Ma et al.

JOURNAL OF APPLIED PHYSICS (2014)

添加到收藏夹

Article Chemistry, Multidisciplinary

Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen

Daisuke Kiriya et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2014)

添加到收藏夹

Article Chemistry, Multidisciplinary

What Does Annealing Do to Metal-Graphene Contacts?

Wei Sun Leong et al.

NANO LETTERS (2014)

添加到收藏夹

Article Chemistry, Multidisciplinary

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

Lingming Yang et al.

NANO LETTERS (2014)

添加到收藏夹

Article Chemistry, Physical

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

Rajesh Kappera et al.

NATURE MATERIALS (2014)

添加到收藏夹

Article Nanoscience & Nanotechnology

Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2

Yung-Chang Lin et al.

NATURE NANOTECHNOLOGY (2014)

添加到收藏夹

Article Multidisciplinary Sciences

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers

Karel-Alexander N. Duerloo et al.

NATURE COMMUNICATIONS (2014)

添加到收藏夹

Article Physics, Multidisciplinary

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

Jiahao Kang et al.

PHYSICAL REVIEW X (2014)

添加到收藏夹

Article Nanoscience & Nanotechnology

Role of chemical termination in edge contact to graphene

Qun Gao et al.

APL MATERIALS (2014)

添加到收藏夹

Article Chemistry, Multidisciplinary

Reducing Contact Resistance in Graphene Devices through Contact Area Patterning

Joshua T. Smith et al.

ACS NANO (2013)

添加到收藏夹

Article Chemistry, Multidisciplinary

High Performance Multilayer MoS2 Transistors with Scandium Contacts

Saptarshi Das et al.

NANO LETTERS (2013)

添加到收藏夹

Article Nanoscience & Nanotechnology

Large local Hall effect in pin-hole dominated multigraphene spin-valves

P. K. Muduli et al.

NANOTECHNOLOGY (2013)

添加到收藏夹

Article Multidisciplinary Sciences

Van der Waals heterostructures

A. K. Geim et al.

NATURE (2013)

添加到收藏夹

Article Multidisciplinary Sciences

One-Dimensional Electrical Contact to a Two-Dimensional Material

L. Wang et al.

SCIENCE (2013)

添加到收藏夹

Article Chemistry, Multidisciplinary

Channel Length Scaling of MoS2 MOSFETs

Han Liu et al.

ACS NANO (2012)

添加到收藏夹

Article Engineering, Electrical & Electronic

Metal-to-Multilayer-Graphene Contact-Part II: Analysis of Contact Resistance

Yasin Khatami et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)

添加到收藏夹

Article Engineering, Electrical & Electronic

Metal-to-Multilayer-Graphene Contact-Part I: Contact Resistance Modeling

Yasin Khatami et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)

添加到收藏夹

Article Materials Science, Multidisciplinary

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

S. P. Dash et al.

PHYSICAL REVIEW B (2011)

添加到收藏夹

Article Physics, Applied

Contact resistivity and current flow path at metal/graphene contact

K. Nagashio et al.

APPLIED PHYSICS LETTERS (2010)

添加到收藏夹

Article Chemistry, Physical

Contact Resistance for End-Contacted Metal-Graphene and Metal-Nanotube Interfaces from Quantum Mechanics

Yuki Matsuda et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2010)

添加到收藏夹

Article Nanoscience & Nanotechnology

Boron nitride substrates for high-quality graphene electronics

C. R. Dean et al.

NATURE NANOTECHNOLOGY (2010)

添加到收藏夹

Article Physics, Multidisciplinary

Tunneling Spin Injection into Single Layer Graphene

Wei Han et al.

PHYSICAL REVIEW LETTERS (2010)

添加到收藏夹

Article Physics, Multidisciplinary

Doping graphene with metal contacts

G. Giovannetti et al.

PHYSICAL REVIEW LETTERS (2008)

添加到收藏夹

Article Optics

Charge-insensitive qubit design derived from the Cooper pair box

Jens Koch et al.

PHYSICAL REVIEW A (2007)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.