期刊
ADVANCED MATERIALS
卷 34, 期 19, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202200643
关键词
2D phase transformations; atomic mechanisms; chalcogen deficiency; in situ electron microscopy; stoichiometry; transition metal dichalcogenides
类别
资金
- JST-CREST [JPMJCR20B1, JPMJCR20B5, JPMJCR1993]
- JSPS-KAKENHI [JP16H06333, JP19K04434, JP17H04797, NSFC11804247]
- National Natural Science Foundation of China [51972204]
- Institute for Basic Science of South Korea [IBS-R019-D1]
In this study, novel 2D phases with different stoichiometries were fabricated in monolayer MoS2 and MoSe2 using in situ electron microscopy. Highly localized and atomically sharp multiphase transformations were observed, and their atomic mechanisms were determined.
Phase transformation lies at the heart of materials science because it allows for the control of structural phases of solids with desired properties. It has long been a challenge to manipulate phase transformations in crystals at the nanoscale with designed interfaces and compositions. Here in situ electron microscopy is employed to fabricate novel 2D phases with different stoichiometries in monolayer MoS2 and MoSe2. The multiphase transformations: MoS2 -> Mo4S6 and MoSe2 -> Mo6Se6 which are highly localized with atomically sharp boundaries are observed. Their atomic mechanisms are determined as chalcogen 2H <-> 1T sliding, cation shift, and commensurate lattice reconstructions, resulting in decreasing direct bandgaps and even a semiconductor-metal transition. These results will be a paradigm for the manipulation of multiphase heterostructures with controlled compositions and sharp interfaces, which will guide the future phase engineered electronics and optoelectronics of metal chalcogenides.
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