期刊
ADVANCED MATERIALS
卷 34, 期 26, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202201887
关键词
light-emitting diodes; near-infrared luminescence; phosphors
类别
资金
- National Key Research and Development Program of China [2021YFB3500400, 2021YFE0105700]
- National Natural Science Foundations of China [52102169, 51972118, 51961145101]
- Guangzhou Science & Technology Project [202007020005]
- China Postdoctoral Science Foundation [2021M691053]
- State Key Laboratory of Luminescent Materials and Devices [Skllmd-2021-09]
- Local Innovation and Reasearch Teams Project of Guangdong Pearl River Talents Program [2017Bx137]
- French National Agency for Research [ANR-21-ERCC-0009-01]
- Young Elite Scientists Sponsorship Program by China Association for Science and Technology [YESS20200053]
- Agence Nationale de la Recherche (ANR) [ANR-21-ERCC-0009] Funding Source: Agence Nationale de la Recherche (ANR)
This work demonstrates the significant improvement and stabilization of the photoluminescence quantum efficiency of europium-activated calcium oxide NIR phosphor, resulting in record-high external quantum efficiency and better thermal stability at LED operating temperatures. The developed NIR-LEDs exhibit record photoelectric efficiency and output power.
Near-infrared (NIR) luminescence materials with broadband emissions are necessary for the development of light-emitting diodes (LEDs) based light sources. However, most known NIR-emitting materials are limited by their low external quantum efficiency. This work demonstrates how the photoluminescence quantum efficiency of europium-activated calcium oxide (CaO:Eu) NIR phosphor can be significantly improved and stabilized at operating temperatures of LEDs. A carbon paper wrapping technology is innovatively developed and used during the solid-state sintering to promote the reduction of Eu3+ into Eu2+. In parallel, the oxygen vacancies in the CaO lattice are repaired utilizing GeO2 decomposition. Through this process, a record-high external quantum efficiency of 54.7% at 740 nm is obtained with a thermal stability greatly improved from 57% to 90% at 125 degrees C. The as-fabricated NIR-LEDs reach record photoelectric efficiency (100 mA@23.4%) and output power (100 mA @ 319.5 mW). This discovery of high-performance phosphors will open new research avenues for broadband NIR LED light sources in a variety of photonics applications.
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