期刊
ADVANCED FUNCTIONAL MATERIALS
卷 32, 期 27, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202200880
关键词
chalcogen; dithienothiophene; high-performance; organic field effect transistors; selenoalkylated bithiophene; solution processable
类别
资金
- Ministry of Science and Technology (MOST) of Taiwan [MOST-109-3111-8-008-001, MOST-110-2628-8-008-007]
- NCU-Covestro Research Center
- MOST in Taiwan [MOST-110-2636-E-002-021]
- AFOSR [FA9550-18-1-0320]
The effect of heteroalkyl substitution on molecular semiconductors is studied. The devices based on tetradecylated DDTT-SeBT exhibit the highest electron mobility when fabricated by the solution-shearing method.
The effect of heteroalkyl (-XR, X = Se, S, O) substitution on a series of molecular semiconductors having a 3,3 '-diheteroalkyl-2,2 '-bithiophene (XBT) central core is studied. Thus, the selenotetradecyl (-SeC14H29) SeBT core is investigated by end-functionalization with two dithienothiophene (DTT), thienothiophene (TT), and thiophene (T) units to give SeBTs 1-3, respectively, for molecular pi-conjugation effect examination. Furthermore, the selenodecyl (-SeC10H21) and selenohexyl (-SeC6H13) SeBT cores end-capped with DTTs to give SeBTs 1B and 1C, respectively, are synthesized for understanding -SeR length effects. To address systematically the impact of the chalcogen heteroatom, the newly developed selenoalkyl SeBTs are compared with the previously reported thiotetradecyl (-SC14H29) DDTT-SBT (4) and the new tetradecyloxy (-OC14H29) DDTT-OBT (5). When fabricating organic field effect transistors by the solution-shearing method, the devices based on the tetradecylated DDTT-SeBT (1) exhibit the highest mobility up to 4.01 cm(2) V-1 s(-1), which is larger than those of the other SeBT compounds and both DDTT-SBT (4) (1.70 cm(2) V-1 s(-1)) and DDTT-OBT (5) (9.32 x 10(-4) cm(2) V-1 s(-1)). These results are rationalized by a combination of crystallographic, morphological, and microstructural analysis.
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