Lasing from Laminated Quasi-2D/3D Perovskite Planar Heterostructures

Planar heterostructures are widely used in commercial III-V semiconductor lasers, but not yet explored for perovskite gain media. This study investigates the gain performance of a CsPbBr3(BABr)(x)/CsPbBr3 (quasi-2D/3D) perovskite planar heterostructure fabricated by lamination. The resulting heterostructure is designed to enhance the photon and excited-state density in a non-quantum-confined thin 3D layer (30 nm) by simultaneously 1) confining the optical mode and 2) supporting excited-state transfer from the wider-bandgap quasi-2D perovskite to the lower-bandgap 3D perovskite. This allows the low amplified spontaneous emission (ASE) threshold of 150 (+/- 20) mu J cm(-2) and lasing threshold of 46 (+/- 15) mu J cm(-2) to be realized in such a heterostructure under nanosecond pumping. Further modeling reveals that the ASE performance can be significantly improved via maximizing the excited-state transfer efficiency (only 14% for current prototypes) and highlights the potential of perovskite planar heterostructures as high-performance gain media.

Automated summary

Planar heterostructures have been widely used in III-V semiconductor lasers but have not yet been explored for perovskite gain media. This study investigates the gain performance of a CsPbBr3(BABr)(x)/CsPbBr3 perovskite planar heterostructure fabricated by lamination. The results show that the heterostructure achieves low ASE threshold and lasing threshold, and modeling suggests that further improvement is possible by maximizing excited-state transfer efficiency. This study highlights the potential of perovskite planar heterostructures as high-performance gain media.