Recent Progress in Crystal Growth of Bulk GaN

State of the art in crystallization of bulk GaN is reviewed and discussed. Fundamental physical barriers making crystal growth of GaN difficult are indicated. The Na-flux, ammonothermal and halide vapor phase epitaxy methods are presented as the most advanced and promising ones. The high nitrogen pressure solution approach developed at IHPP PAS is mentioned as a starting point of bulk GaN research.

Automated summary

The latest advancements and challenges in bulk GaN crystal growth are reviewed and discussed in this article. Fundamental physical barriers hindering the growth process are identified, and the Na-flux, ammonothermal, and halide vapor phase epitaxy methods are presented as the most advanced and promising techniques. The high nitrogen pressure solution approach developed at IHPP PAS is highlighted as a crucial starting point for bulk GaN research.