期刊
ACS NANO
卷 16, 期 4, 页码 6878-6885出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c01930
关键词
spin-orbit torque; exchange bias; magnetization switching; multistate memory; spin logic
类别
资金
- National Natural Science Foundation of China [12174219, 51871112, 11774199]
- Major Basic Research Project of Shandong Province [ZR2020ZD28]
- 111 Project [B13029]
This study investigates the IrMn/Co/Ru/CoPt/CoO heterojunction as a potential candidate for multistate memory and programmable spin logic. It demonstrates 10 states of nonvolatile memory and multiple logic-in-memory functions.
Controllable spin-orbit torque based nonvolatile memory is highly desired for constructing energy efficient reconfigurable logic-in-memory computing suitable for emerging data-intensive applications. Here, we report our exploration of the IrMn/Co/Ru/CoPt/CoO heterojunction as a potential candidate for applications in both multistate memory and programmable spin logic. The studied heterojunction can be programmed into four different magnetic configurations at will by tuning both the in-plane exchange bias at the interface of IrMn and Co layers and the out-of-plane exchange bias at the interface of CoPt and CoO layers. Moreover, on the basis of the controllable exchange bias effect, 10 states of nonvolatile memory and multiple logic-in-memory functions have been demonstrated. Our findings indicate that IrMn/Co/Ru/CoPt/CoO multilayered structures can be used as a building block for next-generation logic-in-memory and multifunctional multidimensional spintronic devices.
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