4.8 Article

Current-Induced Magnetization Switching Across a Nearly Room-Temperature Compensation Point in an Insulating Compensated Ferrimagnet

期刊

ACS NANO
卷 16, 期 5, 页码 8181-8189

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c01788

关键词

insulating compensated ferrimagnet; spin-orbit torque; magnetization switching; perpendicular magnetic anisotropy; spin current; interface

资金

  1. King Abdullah University of Science and Technology, Office of Sponsored Research (OSR)
  2. OSR [2018-3717-CRG7, OSR 2019-CRG8-4081]

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This study systematically investigated the spin-orbit torque in insulating compensated ferrimagnetic materials and successfully achieved deterministic current-induced magnetization switching at room temperature.
Insulating compensated ferrimagnets, especially hosting room-temperature compensation points, are considered promising candidates for developing ultra-high-density and ultrafast magnonic devices owing to combining the characteristics of both ferromagnets and antiferromagnets. These intriguing features become outstanding close to their compensation points. However, their spin-orbit torque (SOT)-induced magnetization switching, particularly in the vicinity of the compensation points, remains unclear. Herein, we systematically investigated the SOT in insulating compensated ferrimagnetic Gd3Fe5O12/Pt heterostructures with perpendicular magnetic anisotropy. A nearly room-temperature compensation point (T-comp similar to 297 K) was consistently identified by the magnetization curves, spin Hall-induced anomalous Hall effect, and spin Hall magnetoresistance measurements. Moreover, using 100 ns duration pulsed current, deterministic current-induced magnetization switching below and above T-comp, even at 294 and 301 K, was achieved with opposite switching polarity. It is found that a large current is required to switch the magnetization in the vicinity of T-comp, although the effective SOT field increases close to T-comp. Our finding provides alternative opportunities for exploring ultrafast room-temperature magnon-based devices.

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