期刊
ACS NANO
卷 16, 期 4, 页码 5545-5555出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c10181
关键词
2D palladium diselenide; in situ fabrication; PdSe2/GaN Schottky junction; polarization-sensitive UV photodetector; polarized UV imaging
类别
资金
- National Natural Science Foundation of China [U2004165, 91833303, 51821002, 11974016, 51973147]
- Natural Science Foundation of Henan Province, China [202300410376]
A highly polarization-sensitive PdSe2/GaN Schottky junction is developed for UV photodetection. The device exhibits a large responsivity, high specific detectivity, and fast response speed. The device is highly sensitive to polarized UV light due to the puckered structure of the PdSe2 layer, with a large dichroic ratio.
Polarization-sensitive ultraviolet (UV) photodetection is of great technological importance for both civilian and military applications. Two-dimensional (2D) group-10 transition-metal dichalcogenides (TMDs), especially palladium diselenide (PdSe2), are promising candidates for polarized photodetection due to their low-symmetric crystal structure. However, the lack of an efficient heterostructure severely restricts their applications in UV-polarized photodetection. Here, we develop a PdSe2/GaN Schottky junction by in situ van der Waals growth for highly polarization-sensitive UV photodetection. Owing to the high-quality junction, the device exhibits an appealing UV detection performance in terms of a large responsivity of 249.9 mA/W, a high specific detectivity, and a fast response speed. More importantly, thanks to the puckered structure of the PdSe2 layer, the device is highly sensitive to polarized UV light with a large dichroic ratio up to 4.5, which is among the highest for 2D TMD material-based UV polarization-sensitive photodetectors. These findings further enable the demonstration of the outstanding polarized UV imaging capability of the Schottky junction, as well as its utility as an optical receiver for secure UV optical communication. Our work offers a strategy to fabricate the PdSe2-based heterostructure for high-performance polarization-sensitive UV photodetection.
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