相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Employing liquid crystal material as regulator to enhance performance of photomultiplication type polymer photodetectors
Kaixuan Yang et al.
CHEMICAL ENGINEERING JOURNAL (2022)
Semipolar (11-22) AlN Grown on m-Plane Sapphire by Flow-Rate Modulation Epitaxy for Vacuum-Ultraviolet Photodetection
Jiankun Yang et al.
CRYSTAL GROWTH & DESIGN (2022)
Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors
Yuhui Yang et al.
APPLIED PHYSICS LETTERS (2021)
Impact of crystallinity towards the performance of semi-polar (11-22) GaN UV photodetector
Abdullah Haaziq Ahmad Makinudin et al.
MATERIALS LETTERS (2021)
Highly Sensitive Narrowband Photomultiplication-Type Organic Photodetectors Prepared by Transfer-Printed Technology
Zijin Zhao et al.
ADVANCED FUNCTIONAL MATERIALS (2021)
Highly sensitive, broad-band organic photomultiplication-type photodetectors covering UV-Vis-NIR
Ming Liu et al.
JOURNAL OF MATERIALS CHEMISTRY C (2021)
Stress evolution in AlN growth on nano-patterned sapphire substrates
Nan Xie et al.
APPLIED PHYSICS EXPRESS (2020)
Single-phase high-quality semipolar (10-13) AlN epilayers on m-plane (10-10) sapphire substrates
Xu-Qiang Shen et al.
APPLIED PHYSICS EXPRESS (2020)
Nonpolar (11(2)over-bar0) GaN Metal-Semiconductor-Metal Photodetectors with Superior Performance on Silicon
Yuefei Cai et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Structural characterization of AlN (11-22) films prepared by sputtering and thermal annealing on m-plane sapphire substrates
Qiong Feng et al.
SUPERLATTICES AND MICROSTRUCTURES (2020)
A Self-Powered High-Performance UV Photodetector Based on Core-Shell GaN/MoO3-x Nanorod Array Heterojunction
Yulin Zheng et al.
ADVANCED OPTICAL MATERIALS (2020)
AlGaN-based Schottky barrier deep ultraviolet photodetector grown on Si substrate
Fangzhou Liang et al.
OPTICS EXPRESS (2020)
Vacuum-Ultraviolet Photon Detections
Wei Zheng et al.
ISCIENCE (2020)
Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
Humberto M. Foronda et al.
APPLIED PHYSICS LETTERS (2020)
Influence of wet chemical etching on electronic structure and optical response of polar (0001) GaN films
Abhiram Gundimeda et al.
MATERIALS CHEMISTRY AND PHYSICS (2019)
Simultaneously improved sensitivity and response speed of β-Ga2O3 solar-blind photodetector via localized tuning of oxygen deficiency
L. X. Qian et al.
APPLIED PHYSICS LETTERS (2019)
Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors
Chao Xie et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges
Morteza Monavarian et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2019)
Single-Crystal ZnO/AlN Core/Shell Nanowires for Ultraviolet Emission and Dual-Color Ultraviolet Photodetection
Daotong You et al.
ADVANCED OPTICAL MATERIALS (2019)
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III-nitrides, III-oxides, and two-dimensional materials
Nasir Alfaraj et al.
JOURNAL OF SEMICONDUCTORS (2019)
In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN
Rohit Pant et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Effects of Ga Supply on the Growth of (11-22) AlN on m-Plane (10-10) Sapphire Substrates
Masafumi Jo et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2018)
Diamond-Based All-Carbon Photodetectors for Solar-Blind Imaging
Chao-Nan Lin et al.
ADVANCED OPTICAL MATERIALS (2018)
AlGaN photonics: recent advances in materials and ultraviolet devices
Dabing Li et al.
ADVANCES IN OPTICS AND PHOTONICS (2018)
High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors
Wenliang Wang et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
High-performance nonpolar a-plane GaN-based metal-semiconductor-metal UV photo-detectors fabricated on LaAlO3 substrates
Wenliang Wang et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
Solar blind deep ultraviolet β-Ga2O3 photodetectors grown on sapphire by the Mist-CVD method
Yu Xu et al.
OPTICAL MATERIALS EXPRESS (2018)
Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors
Monu Mishra et al.
ACS OMEGA (2018)
A flexible solar-blind 2D boron nitride nanopaper-based photodetector with high thermal resistance
Chun-Ho Lin et al.
NPJ 2D MATERIALS AND APPLICATIONS (2018)
Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors
Shashwat Rathkanthiwar et al.
JOURNAL OF APPLIED PHYSICS (2017)
Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films
Monu Mishra et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2017)
Room-Temperature Fabricated Amorphous Ga2O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates
Shujuan Cui et al.
ADVANCED OPTICAL MATERIALS (2017)
Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates
Masafumi Jo et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14, NO 8 (2017)
High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector
Akira Yoshikawa et al.
APPLIED PHYSICS LETTERS (2017)
Fabrication of non-polar GaN based highly responsive and fast UV photodetector
Abhiram Gundimeda et al.
APPLIED PHYSICS LETTERS (2017)
Terahertz intersubband photodetectors based on semi- polar GaN/AlGaN heterostructures
Habibe Durmaz et al.
APPLIED PHYSICS LETTERS (2016)
Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template
Y. Zhang et al.
AIP ADVANCES (2016)
KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
W. Guo et al.
APPLIED PHYSICS LETTERS (2015)
Suppression of Dark Current on AlGaN/GaN Metal-Semiconductor-Metal Photodetectors
Han-Yin Liu et al.
IEEE SENSORS JOURNAL (2015)
Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy
Shruti Mukundan et al.
JOURNAL OF APPLIED PHYSICS (2014)
Chemical etching behaviors of semipolar (11(2)over-bar2) and nonpolar (11(2)over-bar0) gallium nitride films
Younghun Jung et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2014)
Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost-Competitive Light Emitters
Sungmin Jung et al.
ADVANCED MATERIALS (2013)
Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy
J. Stellmach et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal-Semiconductor-Metal Photodetectors for High-Temperature Applications
Feng Xie et al.
IEEE SENSORS JOURNAL (2012)
Growth and characterizations of semipolar (11(2)over-bar2) InN
Duc V. Dinh et al.
JOURNAL OF APPLIED PHYSICS (2012)
Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar and semipolar orientations
P. Vennegues
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Charge transport in non-polar and semi-polar III-V nitride heterostructures
Aniruddha Konar et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
R. M. Farrell et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes
Xiaodong Wang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2011)
Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers
Tongbo Wei et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2010)
High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications
A. Navarro et al.
APPLIED PHYSICS LETTERS (2009)
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy
T. B. Wei et al.
JOURNAL OF CRYSTAL GROWTH (2009)
AlGaN-based high-performance metal-semiconductor-metal photodetectors
Mudu Goekkavas et al.
PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS (2007)
Improved quality (11(2)over-bar-0) a-plane GaN with sidewall lateral epitaxial overgrowth
BM Imer et al.
APPLIED PHYSICS LETTERS (2006)
Leakage mechanism in GaN and AlGaN schottky interfaces
T Hashizume et al.
APPLIED PHYSICS LETTERS (2004)
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
P Waltereit et al.
NATURE (2000)