期刊
ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 12, 页码 14342-14358出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c00319
关键词
tandem; gettering; chalcogenides; Si; TOPCon
资金
- Innovation Fund Denmark [6154-00008A]
- Swedish Foundation for Strategic Research [RMA150030, SSF-RIF14-0053]
- Swedish Research Council [2019-04793, 821-2012-5144, 2017-00646-9]
- Swedish Research Council [2019-04793, 2017-00646] Funding Source: Swedish Research Council
- Vinnova [2019-04793] Funding Source: Vinnova
Multijunction solar cells in a tandem configuration using crystalline silicon as the bottom cell can reduce electricity costs. However, only a limited number of top and bottom cell architectures are compatible for direct integration on silicon. By using polySi/SiOx passivating contacts, degradation can be minimized and the lifetime of the bottom cell can be increased. Applying this concept to low-cost top cell chalcogenides, the efficiency and resilience of the tandem solar cells can be improved.
Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as the bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high-temperature constraints, where the interface between subcells is subject to a trade-off between transmittance, electrical interconnection, and bottom cell degradation. Using polySi/SiOx passivating contacts for Si, this degradation can be largely circumvented by tuning the polySi/SiOx stacks to promote gettering of contaminants admitted into the Si bottom cell during the top cell synthesis. Applying this concept to the low-cost top cell chalcogenides Cu2ZnSnS4 (CZTS), CuGaSe2 (CGSe), and AgInGaSe2 (AIGSe), fabricated under harsh S or Se atmospheres above 550 degrees C, we show that increasing the heavily doped polySi layer thickness from 40 to up to 400 nm prevents a reduction in Si carrier lifetime by 1 order of magnitude, with final lifetimes above 500 mu s uniformly across areas up to 20 cm(2). In all cases, the increased resilience was correlated with a 99.9% reduction in contaminant concentration in the c-Si bulk, provided by the thick polySi layer, which acts as a buried gettering layer in the tandem structure without compromising the Si passivation quality. The Si resilience decreased as AIGSe > CGSe > CZTS, in accordance with the measured Cu contamination profiles and higher annealing temperatures. An efficiency of up to 7% was achieved for a CZTS/Si tandem, where the Si bottom cell is no longer the limiting factor.
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