4.8 Article

Strong In-Plane Optical and Electrical Anisotropies of Multilayered γ-InSe for High-Responsivity Polarization-Sensitive Photodetectors

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 18, 页码 21383-21391

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c04204

关键词

high responsivity; high mobility; in-plane anisotropy; gamma-InSe; polarization-sensitive photodetector

资金

  1. Science and Technology Program of Guangzhou [202102021121, 202103030001]
  2. Open Research Fund of Songshan Lake Materials Laboratory [2021SLABFN01]
  3. National Natural Science Foundation of China [61874037, 62004071]
  4. Pearl River Talent Recruitment Program [2019ZT08X639]
  5. Outstanding Young Talent Project of South China Normal University

向作者/读者索取更多资源

This study identifies promising new two-dimensional material γ-InSe with low-symmetry structures for developing monolithic polarization-sensitive photodetectors. A superior responsivity polarization-sensitive photodetector based on multilayer γ-InSe is constructed, showing high efficiency of light absorption, excellent carrier mobility, and exceptional responsivity under polarized light. These findings provide insights into in-plane anisotropic properties of 2D materials and propose a stable and environmentally friendly candidate for anisotropic optoelectronic applications.
Recently, identifying promising new two-dimensional (2D) materials with low-symmetry structures has aroused great interest for developing monolithic polarization-sensitive photodetectors with small volume. Here, after comprehensive research of the in-plane anisotropic structure and electronic and optoelectronic properties of layered gamma-InSe, a superior responsivity polarization-sensitive photodetector based on multilayer gamma-InSe is constructed by a facile method. Notably, the conductance and carrier mobility of the device along the armchair direction are 11.8 and 2.35 times larger than those along the zigzag direction, respectively. Benefittin from the high efficiency of light absorption and excellent carrier mobility (221 cm(2) V-1 s(-1)) of our multilayered gamma-InSe along the armchair direction, the device exhibits a superior responsivity of 127 A/W and an external quantum efficiency (EQE) of 10 4 %. Especially, the highest responsivity along the armchair direction of our gamma-InSe polarization-sensitive photodetectors can reach as high as 78.5 A/W under polarized light. This value is much higher than those of other devices even under unpolarized light. This work not only provides an insight into the in-plane anisotropic properties of 2D layered gamma-InSe but also proposes a stable and environmentally friendly candidate for anisotropic optoelectronic applications.

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