相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source
Shangfeng Liu et al.
ADVANCED FUNCTIONAL MATERIALS (2021)
High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes
Ding Wang et al.
APPLIED PHYSICS EXPRESS (2021)
N-polar ScAlN and HEMTs grown by molecular beam epitaxy
Ping Wang et al.
APPLIED PHYSICS LETTERS (2021)
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
Ping Wang et al.
APPLIED PHYSICS LETTERS (2021)
Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes
Ye Yu et al.
LIGHT-SCIENCE & APPLICATIONS (2021)
Eutectic Formation, V/III Ratio, and Controlled Polarity Inversion in Nitrides on Silicon
Alexana Roshko et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2020)
Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High-Brightness Violet Light-Emitting Diodes
Yanqing Jia et al.
ADVANCED OPTICAL MATERIALS (2020)
Monolayer GaN excitonic deep ultraviolet light emitting diodes
Y. Wu et al.
APPLIED PHYSICS LETTERS (2020)
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
Brian Romanczyk et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes
Fang Liu et al.
ADVANCED FUNCTIONAL MATERIALS (2020)
Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy
David Arto Laleyan et al.
APPLIED PHYSICS LETTERS (2020)
Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes
Ping Wang et al.
APPLIED PHYSICS LETTERS (2020)
Low dislocation density AlN on sapphire prepared by double sputtering and annealing
Ding Wang et al.
APPLIED PHYSICS EXPRESS (2020)
Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy
Sandra Diez et al.
APPLIED PHYSICS LETTERS (2020)
Single-photon emission from isolated monolayer islands of InGaN
Xiaoxiao Sun et al.
LIGHT-SCIENCE & APPLICATIONS (2020)
Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting Diodes
Fang Liu et al.
ADVANCED SCIENCE (2020)
Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene
Zhaolong Chen et al.
ADVANCED MATERIALS (2019)
The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion
Alexana Roshko et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures
Anthony Aiello et al.
NANO LETTERS (2019)
A GaN:Sn nanoarchitecture integrated on a silicon platform for converting CO2 to HCOOH by photoelectrocatalysis
Baowen Zhou et al.
ENERGY & ENVIRONMENTAL SCIENCE (2019)
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
Brian Romanczyk et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Dr. Probe: A software for high-resolution STEM image simulation
J. Barthel
ULTRAMICROSCOPY (2018)
Intentional polarity conversion of AlN epitaxial layers by oxygen
N. Stolyarchuk et al.
SCIENTIFIC REPORTS (2018)
Polarity governs atomic interaction through two-dimensional materials
Wei Kong et al.
NATURE MATERIALS (2018)
Polarity-Induced Selective Area Epitaxy of GaN Nanowires
Ziani de Souza Schiaber et al.
NANO LETTERS (2017)
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 °C temperature range
Sebastian Tamariz et al.
JOURNAL OF CRYSTAL GROWTH (2017)
Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)
Ahmad Mostafa et al.
MATERIALS (2017)
Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
Matt D. Brubaker et al.
CRYSTAL GROWTH & DESIGN (2016)
Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires
Ping Wang et al.
NANO LETTERS (2016)
Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
Yi Sun et al.
NATURE PHOTONICS (2016)
Hexagonal boron nitride is an indirect bandgap semiconductor
G. Cassabois et al.
NATURE PHOTONICS (2016)
Polarity Control in Group-III Nitrides beyond Pragmatism
Stefan Mohn et al.
PHYSICAL REVIEW APPLIED (2016)
GaN-on-Si blue/white LEDs: epitaxy, chip, and package
Sun Qian et al.
JOURNAL OF SEMICONDUCTORS (2016)
High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology
Jianpeng Cheng et al.
APPLIED PHYSICS LETTERS (2015)
The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires
Thomas Auzelle et al.
JOURNAL OF APPLIED PHYSICS (2015)
Sixteen years GaN on Si
Armin Dadgar
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)
Nobel Lecture: Fascinated journeys into blue light
Isamu Akasaki
REVIEWS OF MODERN PHYSICS (2015)
N-polar AlN thin layers grown on Si(111) by plasma-assisted MBE
Oleg Ledyaev et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2014)
Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si (111)
Benjamin Leung et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 (2014)
Atomically smooth and homogeneously N-polar AlN film grown on silicon by alumination of Si3N4
Jiannan Hu et al.
APPLIED PHYSICS LETTERS (2013)
Prospects of III-nitride optoelectronics grown on Si
D. Zhu et al.
REPORTS ON PROGRESS IN PHYSICS (2013)
N-Polar GaN Nanowires Seeded by Al Droplets on Si(111)
Ludovic Largeau et al.
CRYSTAL GROWTH & DESIGN (2012)
Growth of high quality N-polar AlN(0001) on Si(111) by plasma assisted molecular beam epitaxy
Sansaptak Dasgupta et al.
APPLIED PHYSICS LETTERS (2009)
AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?
A. Le Louarn et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives
Gaudenzio Meneghesso et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2008)
Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions
W. E. Hoke et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2007)
Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates
S Mikroulis et al.
APPLIED PHYSICS LETTERS (2002)
分享论文
