期刊
ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 12, 页码 14783-14790出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c01046
关键词
PbS quantum dots; ZnO nanocrystals; infrared photodetector; photomultiplication; oxygen vacancy
资金
- National Key Research and Development Program of China [2021YFA0715502]
- National Natural Science Foundation of China [92056119, 61935016, 62004125, NSFC-21727801]
- ShanghaiTech start-up funding, 1000 Young Talent Program
- Science and Technology Commission of Shanghai Municipality [20XD1402500, 20JC1415800]
PbS colloidal quantum dots (CQDs) show promise as low-cost and high-performance infrared photodetectors. By creating a self-trapped ZnO layer on the surface, significant photomultiplication can be achieved at extremely low bias.
PbS colloidal quantum dots (CQDs) are emerging as promising candidates for next-generation, low-cost, and high-performance infrared photodetectors. Recently, photomultiplication has been explored to improve the detectivity of CQD infrared photodetectors by doping charge-trapping material into a matrix. However, this relies on remote doping that could influence carrier transfer giving rise to limited photomultiplication. Herein, a charge-self-trapped ZnO layer is prepared by a surface reaction between acid and ZnO. Photogenerated electrons trapped by oxygen vacancy defects at the ZnO surface generate a strong interfacial electrical field and induce large photomultiplication at extremely low bias. A PbS CQD infrared photodiode based on this structure shows a response (R) of 77.0 A.W-1 and specific detectivity of 1.5 x 10(11) Jones at 1550 nm under a -0.3 V bias. This self-trapped ZnO layer can be applied to other photodetectors such as perovskite-based devices.
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