Sub-3 V, MHz-Class Electrolyte-Gated Transistors and Inverters

Electrolyte-gated transistors (EGTs) have emerging applications in physiological recording, neuromorphic computing, sensing, and flexible printed electronics. A challenge for these devices is their slow switching speed, which has several causes. Here, we report the fabrication and characterization of n-type ZnO-based EGTs with signal propagation delays as short as 70 ns. Propagation delays are assessed in dynamically operating inverters and five-stage ring oscillators as a function of channel dimensions and supply voltages up to 3 V. Substantial decreases in switching time are realized by minimizing parasitic resistances and capacitances that are associated with the electrolyte in these devices. Stable switching at 1-10 MHz is achieved in individual inverter stages with 10-40 mu m channel lengths, and analysis suggests that further improvements are possible.

Automated summary

In this study, n-type ZnO-based electrolyte-gated transistors (EGTs) with short signal propagation delays are fabricated and characterized. By minimizing parasitic resistances and capacitances, the switching time is significantly reduced, enabling stable switching at higher frequencies.