期刊
ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 22, 页码 2648-2658出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c03193
关键词
deep ultraviolet (DUV); photodetector; self-powered; Ag film thickness; Ag2O/beta-Ga2O3; p-n junction
资金
- Korea Institute for Advancement of Technology (KIAT) - Korea Government (MOTIE) [P0012451]
- Technology Innovation Program - MOTIE, Korea [20016102]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20016102] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Self-powered deep-ultraviolet photodetectors were constructed by continuously depositing an Ag/Ag2O layer on a beta-Ga2O3 epitaxial layer. It was found that photodetectors using a thin Ag film as the top electrode exhibited high photoresponsivity, while Ag films thinner than the threshold thickness showed poor performance.
Self-powered deep-ultraviolet photodetectors have received considerable attention in recent years because of their efficiency, reliability, and various applications in civilian and military fields. Herein, a Ag/Ag2O layer is continuously deposited on a beta-Ga2O3 epitaxial layer by a facing target sputtering system without opening the chamber, which has an advantage in time and cost. A p-n junction photodetector was constructed through the Ag2O/beta-Ga2O3 heterojunction and by varying the thickness of the Ag film, which was controlled by the sputtering time. The effect of top electrode thickness on the photoresponse characteristics of photodetectors was studied. Because thin Ag films have low surface roughness, indicating low optical loss and good interfacial conditions, photodetectors using a thin Ag film as the top electrode exhibit high photoresponsivity. However, Ag films that were thinner than the threshold thickness, which is the minimum thickness required to form a continuous, homogeneous surface film, exhibited rather low performance owing to the high reflection and scattering caused by the inhomogeneous surface morphology. The as-fabricated photodetector with a 20 nm Ag film presents a high on/off ratio of 3.43 x 10(8), responsivity and detectivity of 25.65 mA/W and 6.10 x 10(11) Jones, respectively, and comparable rise and decay times of 10(8) and 80 ms, respectively. Additionally, even after three months of storage in an ambient environment, the photoresponse of the photodetector was maintained, indicating good stability in air. These results suggest that Ag2O/beta-Ga2O3 heterojunction-based photodetectors with thin Ag films can be used in various applications requiring deep-ultraviolet detection without an external power supply.
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