4.8 Article

In-Depth Chemical and Optoelectronic Analysis of Triple-Cation Perovskite Thin Films by Combining XPS Profiling and PL Imaging

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 30, 页码 34228-34237

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c22286

关键词

halide perovskites; in-depth chemical analysis; film thinning by Ar plus ion beam sputtering; X-ray photoelectron spectroscopy; profiling; photoluminescence

资金

  1. European Union [N845612]
  2. French Agence Nationale de la Recherche [ANR-17-MPGA-0012]
  3. French government [ANR-IEED-002-01]

向作者/读者索取更多资源

The investigation combines XPS profiling and PL characterization to study the effects of Ar+ sputtering on the chemical composition and optoelectronic properties of perovskite layers. The results show that sputtering does not significantly impact the chemical and optoelectronic properties, validating the use of XPS profiling and PL characterization for studying multi-layered photovoltaic devices.
The investigation of chemical and optoelectronic properties of halide perovskite layers and associated interfaces is crucial to harness the full potential of perovskite solar cells. Depth-profiling photoemission spectroscopy is a primary tool to study the chemical properties of halide perovskite layers at different scales from the surface to the bulk. The technique employs ionic argon beam thinning that provides accurate layer thicknesses. However, there is an urgent need to corroborate the reliability of data on chemical properties of halide perovskite thin films to better assess their stability. The present study addresses the question of the Ar+ sputtering thinning on the surface chemical composition and the optoelectronic properties of the triple-cation mixed-halide perovskite by combining X-ray photoemission spectroscopy (XPS) and photoluminescence (PL) spectroscopy. First, XPS profiling is performed by Ar+ beam sputtering on a half-cell: glass/FTO/c-TiO2/perovskite. The resulting profiles show a very homogeneous and reproducible element distribution until near the buried interface; therefore, the layer is considered as quasihomogeneous all over its thickness, and the sputtering process is stable. Second, we evaluated a set of thinned perovskite layers representative of selected steps along the profile by means of PL imaging optical measurements in both steady-state and transient regimes to assess possible perturbation of the optical properties from the surface to bulk. Obtained PL spectra inside the resulting craters show no peak shift nor phase segregation. Accordingly, the transient PL measurements do not reveal any changes of the surface recombination rate in the sputtered areas. This demonstrates that there is no cumulative effect of sputtering nor drastic chemical and optoelectronic modifications, validating the determination of the in-depth composition of the perovskite layer. Combining XPS profiling with PL characterization can be a precise tool to be applied for an extensive study of the multiple layers and mixed organic/inorganic interfaces of photovoltaic devices.

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