4.8 Article

Monolithic and Single-Crystalline Aluminum Silicon Heterostructures

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 22, 页码 26238-26244

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c04599

关键词

silicon; aluminum; metal-semiconductor heterostructure; Schottky barrier field effect transistor; solid-state reaction

资金

  1. Austrian Science Fund (FWF)

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This article discusses the formation of monolithic Al-Si heterostructures using a thermally induced exchange reaction, which provides high-quality and stable interfaces for nanoelectronic devices. Detailed electrical characterizations confirm the symmetric effective Schottky barriers for electrons and holes, demonstrating the potential for reproducible nanojunctions in next-generation electronics.
Overcoming the difficulty in the precise definition of the metal phase of metal-Si heterostructures is among the key prerequisites to enable reproducible next-generation nanoelectronic, optoelectronic, and quantum devices. Here, we report on the formation of monolithic Al-Si heterostructures obtained from both bottom-up and top-down fabricated Si nanostructures and AI contacts. This is enabled by a thermally induced Al-Si exchange reaction, which forms abrupt and void-free metal-semiconductor interfaces in contrast to their bulk counterparts. The selective and controllable transformation of Si NWs into Al provides a nanodevice fabrication platform with high-quality monolithic and single-crystalline Al contacts, revealing resistivities as low as rho = (6.31 +/- 1.17) x 10(-8) Omega m and breakdown current densities of J(max) = (1 +/- 0.13) X 10(12) Omega m(-2). Combining transmission electron microscopy and energy-dispersive X-ray spectroscopy confirmed the composition as well as the crystalline nature of the presented Al-Si-Al heterostructures, with no intermetallic phases formed during the exchange process in contrast to state-of-the-art metal silicides. The thereof formed single-element Al contacts explain the robustness and reproducibility of the junctions. Detailed and systematic electrical characterizations carried out on back- and top-gated heterostructure devices revealed symmetric effective Schottky barriers for electrons and holes. Most importantly, fulfilling compatibility with modern complementary metal-oxide semiconductor fabrication, the proposed thermally induced Al-Si exchange reaction may give rise to the development of nextgeneration reconfigurabIe electronics relying on reproducible nanojunctions.

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