4.8 Article

Light-Harvesting Self-Powered Monolithic-Structure Temperature Sensing Based on 3C-SiC/Si Heterostructure

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 19, 页码 22593-22600

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c01681

关键词

self-powered sensor; light harvesting; temperature sensors; silicon carbide; lateral photovoltaic effect; monolithic structure

资金

  1. Australian Research Council [DE210100852]
  2. Australian Research Council [DE210100852] Funding Source: Australian Research Council

向作者/读者索取更多资源

This paper proposes a novel technology using a monolithic 3C-SiC/Si heterostructure to harvest photon energy and simultaneously sense the surrounding temperature. The technology converts photon energy into electrical energy and utilizes the lateral photovoltage variation to monitor the temperature. Experimental results demonstrate the high sensitivity and temperature measurement capability of the technology in self-power mode.
Utilizing harvesting energy to power sensors has been becoming more critical in the current age of the Internet of Things. In this paper, we propose a novel technology using a monolithic 3C-SiC/Si heterostructure to harvest photon energy to power itself and simultaneously sense the surrounding temperature. The 3C-SiC/Si heterostructure converts photon energy into electrical energy, which is manifested as a lateral photovoltage across the top material layer of the heterostructure. Simultaneously, the lateral photovoltage varies with the surrounding temperature, and this photovoltage variation with temperature is used to monitor the temperature. We characterized the thermoresistive properties of the 3C-SiC/Si heterostructure, evaluated its energy conversion, and investigated its performance as a light-harvesting self-powered temperature sensor. The resistance of the heterostructure gradually drops with increasing temperature with a temperature coefficient of resistance (TCR) ranging from more than -3500 to approximately -8200 ppm/K. The generated lateral photovoltage is as high as 58.8 mV under 12 700 lx light illumination at 25 degrees C. The sensitivity of the sensor in the self-power mode is as high as 360 mu V.K-1 and 330 mu V.K-1 under illumination of 12 700 lx and 7400 lx lights, respectively. The sensor harvests photon energy to power itself and measure temperatures as high as 300 degrees C, which is impressive for semiconductor-based sensor. The proposed technology opens new avenues for energy harvesting self-powered temperature sensors.

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