3.8 Proceedings Paper

Fe implantation induced lattice defects and their recovery in GaN

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Summary: Efficient electrical activation remains a challenge in ion implantation doping of GaN. The amphoteric nature of Mg in GaN, involving both substitutional Ga and interstitial sites, is elucidated through investigations. Implantation at high temperatures causes interstitial Mg to approach the levels found in undoped GaN.

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